Healing of surface states and point defects in single-crystalline β-Ga 2O 3 epilayer

P. Ravadgar*, Ray-Hua Horng, T. Y. Wang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

Single-crystalline β-Ga 2O 3 epilayer on (0001) sapphire was grown at low temperature and low pressure by MOCVD. The as-grown β-Ga 2O 3 epilayer was annealed at 800°C in atmosphere. Crystal structure and quality of the epilayer remained the same after annealing. Influence of surface states and point defects of β-Ga 2O 3 epilayers before and after annealing are studied using room-temperature Photoluminescence (PL) and I-V characteristics. The significant difference in PL property of β-Ga 2O 3 and big difference (∼5 orders in magnitude) in dark current before and after annealing is attributed to the healing of the surface states and point defects. Gallium oxide is known for its high density of oxygen vacancies. Annealing single-crystalline β-Ga 2O 3 epilayer at high temperature makes the healing possible, probably due to oxygen adsorption. A significant healing of surface states and point defects in single-crystalline β-Ga 2O 3 indicates its high potential in fabrication of optoelectronic devices.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 13
Pages79-84
Number of pages6
Edition7
DOIs
StatePublished - 19 Nov 2012
Event13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting - Seattle, WA, United States
Duration: 6 May 201210 May 2012

Publication series

NameECS Transactions
Number7
Volume45
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference13th Symposium on Wide Bandgap Semiconductor Materials and Devices - 221st ECS Meeting
CountryUnited States
CitySeattle, WA
Period6/05/1210/05/12

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    Ravadgar, P., Horng, R-H., & Wang, T. Y. (2012). Healing of surface states and point defects in single-crystalline β-Ga 2O 3 epilayer. In Wide-Bandgap Semiconductor Materials and Devices 13 (7 ed., pp. 79-84). (ECS Transactions; Vol. 45, No. 7). https://doi.org/10.1149/1.3701528