HBT application prospects in the US: Where and when?

P. M. Asbeck; Mau-Chung Chang; J. J. Corcoran; J. F. Jensen; R. N. Nottenburg; A. Oki; H. T. Yuan

doi:10.1109/GAAS.1991.172620

HBT application prospects in the US: Where and when?

P. M. Asbeck^*, Mau-Chung Chang, J. J. Corcoran, J. F. Jensen, R. N. Nottenburg, A. Oki, H. T. Yuan

^*Corresponding author for this work

Department of Electronics Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

A review is presented of the present status of III-V HBT technology in the US, in both laboratory and manufacturing contexts. A definition of the most important applications for HBTs is presented. An assessment is made of the future of the technology, drawing on experiences with other III-IV technologies.

Original language	English
Title of host publication	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
Publisher	Publ by IEEE
Pages	7-10
Number of pages	4
ISBN (Print)	078030196X
DOIs	https://doi.org/10.1109/GAAS.1991.172620
State	Published - 1 Jan 1992
Event	13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA Duration: 20 Oct 1991 → 23 Oct 1991

Publication series

Name	Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Conference

Conference	13th Annual GaAs IC Symposium Technical Digest
City	Monterey, CA, USA
Period	20/10/91 → 23/10/91

Access to Document

10.1109/GAAS.1991.172620

Link to publication in Scopus

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Asbeck, P. M., Chang, M-C., Corcoran, J. J., Jensen, J. F., Nottenburg, R. N., Oki, A., & Yuan, H. T. (1992). HBT application prospects in the US: Where and when? In Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit) (pp. 7-10). (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)). Publ by IEEE. https://doi.org/10.1109/GAAS.1991.172620

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title = "HBT application prospects in the US: Where and when?",

abstract = "A review is presented of the present status of III-V HBT technology in the US, in both laboratory and manufacturing contexts. A definition of the most important applications for HBTs is presented. An assessment is made of the future of the technology, drawing on experiences with other III-IV technologies.",

author = "Asbeck, {P. M.} and Mau-Chung Chang and Corcoran, {J. J.} and Jensen, {J. F.} and Nottenburg, {R. N.} and A. Oki and Yuan, {H. T.}",

year = "1992",

month = jan,

day = "1",

doi = "10.1109/GAAS.1991.172620",

language = "English",

isbn = "078030196X",

series = "Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)",

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note = "null ; Conference date: 20-10-1991 Through 23-10-1991",

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Asbeck, PM, Chang, M-C, Corcoran, JJ, Jensen, JF, Nottenburg, RN, Oki, A & Yuan, HT 1992, HBT application prospects in the US: Where and when? in Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit), Publ by IEEE, pp. 7-10, 13th Annual GaAs IC Symposium Technical Digest, Monterey, CA, USA, 20/10/91. https://doi.org/10.1109/GAAS.1991.172620

HBT application prospects in the US : Where and when? / Asbeck, P. M.; Chang, Mau-Chung; Corcoran, J. J.; Jensen, J. F.; Nottenburg, R. N.; Oki, A.; Yuan, H. T.

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit). Publ by IEEE, 1992. p. 7-10 (Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Oki, A.

AU - Yuan, H. T.

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