HBT application prospects in the US: Where and when?

P. M. Asbeck*, Mau-Chung Chang, J. J. Corcoran, J. F. Jensen, R. N. Nottenburg, A. Oki, H. T. Yuan

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

A review is presented of the present status of III-V HBT technology in the US, in both laboratory and manufacturing contexts. A definition of the most important applications for HBTs is presented. An assessment is made of the future of the technology, drawing on experiences with other III-IV technologies.

Original languageEnglish
Title of host publicationTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)
PublisherPubl by IEEE
Pages7-10
Number of pages4
ISBN (Print)078030196X
DOIs
StatePublished - 1 Jan 1992
Event13th Annual GaAs IC Symposium Technical Digest - Monterey, CA, USA
Duration: 20 Oct 199123 Oct 1991

Publication series

NameTechnical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Conference

Conference13th Annual GaAs IC Symposium Technical Digest
CityMonterey, CA, USA
Period20/10/9123/10/91

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