Harsh photovoltaics using InGaN/GaN multiple quantum well schemes

Der Hsien Lien, Yu Hsuan Hsiao, Shih Guo Yang, Meng Lin Tsai, Tzu Chiao Wei, Si Chen Lee*, Jr Hau He

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

34 Scopus citations

Abstract

Harvesting solar energy at extremely harsh environments is of practical interest for building a self-powered harsh electronic system. However, working at high temperature and radiative environments adversely affects the performance of conventional solar cells. To improve the performance, GaN-based multiple quantum wells (MQWs) are introduced into the solar cells. The implementation of MQWs enables improved efficiency (+0.52%/K) and fill factor (+0.35%/K) with elevated temperature and shows excellent reliability under high-temperature operation. In addition, the GaN-based solar cell exhibits superior radiation robustness (lifetime >30 years under solar storm proton irradiation) due to their strong atomic bonding and direct-bandgap characteristics. This solar cell employing MQW nanostructures provides valuable routes for future developments in self-powered harsh electronics.

Original languageEnglish
Pages (from-to)104-109
Number of pages6
JournalNano Energy
Volume11
DOIs
StatePublished - 1 Jan 2015

Keywords

  • GaN
  • Harsh electronics
  • Quantum well
  • Solar cell

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