Hafnium silicate nanocrystal memory using sol-gel-spin-coating method

Hsin Chiang You*, Tze Hsiang Hsu, Fu-Hsiang Ko, Jiang W. Huang, Tan F. Lei

*Corresponding author for this work

Research output: Contribution to journalArticle

25 Scopus citations

Abstract

The authors fabricate the hafnium silicate nanocrystal memory for the first time using a very simple sol-gel-spin-coating method and 900°C 1-min rapid thermal annealing (RTA). From the TEM identification, the nanocrystals are formed as the charge trapping layer after 900°C 1-min RTA and the size is about 5 nm. They demonstrate the composition of nanocrystal is hafnium silicate from the X-ray-photoelectron- spectroscopy analysis. They verify the electric properties in terms of program/erase (P/E) speed, charge retention, and endurance. The sol-gel device exhibits the long charge retention time of 104 s with only 6% charge loss, and good endurance performance for P/E cycles up to 105.

Original languageEnglish
Pages (from-to)644-646
Number of pages3
JournalIEEE Electron Device Letters
Volume27
Issue number8
DOIs
StatePublished - 1 Aug 2006

Keywords

  • Charge retention
  • Endurance
  • Hafnium silicate
  • Nanocrystal memory
  • Sol-gel spin coating

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