Growth temperature reduction for isoelectronic As-doped GaN

Wen Hsiung Lee*, Huai Ying Huang, Wei Chung Chen, Chiung Fen Lee, Wei-Kuo Chen, Wen Hsiung Chen, Ming Chih Lee

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

Abstract

As-doped GaN films were grown at different temperatures by atmospheric metalorganic chemical vapor deposition. A higher electron Hall mobility, narrower line width in photoluminescence, and longer spatial correlation length of the filmes were obtainable at low growth temperatures compared to undoped GaN grown at the same temperatures as a result of isoelectronic As-doping.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number3 A
StatePublished - 1 Mar 2003

Keywords

  • GaN
  • Hall mobility
  • Isoelectronic As-doping
  • Photoluminescence
  • Raman scattering
  • Spatial correlation length

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