As-doped GaN films were grown at different temperatures by atmospheric metalorganic chemical vapor deposition. A higher electron Hall mobility, narrower line width in photoluminescence, and longer spatial correlation length of the filmes were obtainable at low growth temperatures compared to undoped GaN grown at the same temperatures as a result of isoelectronic As-doping.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||3 A|
|State||Published - 1 Mar 2003|
- Hall mobility
- Isoelectronic As-doping
- Raman scattering
- Spatial correlation length