Growth parameters optimization of GaN high electron mobility transistor structure on silicon carbide substrate

Y. Y. Wong*, S. C. Huang, W. C. Huang, F. Lumbantoruan, Y. S. Chiu, H. C. Wang, H. W. Yu, E. Y. Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High electron mobility transistors heterostructures of AlGaN/GaN were grown by metalorganic chemical vapor deposition system on silicon carbide substrate. The growth parameters such as AlN buffer thickness, AlN spacer growth time and Al content in AlGaN barrier layer were optimized. Moreover, the effects of chamber pressure and V/III ratio at the initial growth state of GaN on film crystal quality were also investigated. The optimized AlGaN/GaN heterostructure has AlN buffer thickness of 120 nm, AlN spacer growth time of 10 s and Al content of 28% in the barrier layer. Furthermore, as a result of using higher chamber pressure and lower V/III, both the GaN crystal quality and electron mobility in the AlGaN/GaN were also significantly improved. After the growth parameter optimization, the GaN (002) and (102) planes exhibited X-ray rocking curve widths of 209 arcsec and 273 arcsec, respectively. Besides, the AlGaN/GaN structure also has an electron mobility of 1832 cm2/V-s and a sheet electron density of 1.08 ×1013 cm-2, which yielding a sheet resistance of 316 Q/sq.

Original languageEnglish
Title of host publicationIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages358-361
Number of pages4
ISBN (Electronic)9781479957606
DOIs
StatePublished - 10 Oct 2014
Event11th IEEE International Conference on Semiconductor Electronics, ICSE 2014 - Kuala Lumpur, Malaysia
Duration: 27 Aug 201429 Aug 2014

Publication series

NameIEEE International Conference on Semiconductor Electronics, Proceedings, ICSE

Conference

Conference11th IEEE International Conference on Semiconductor Electronics, ICSE 2014
CountryMalaysia
CityKuala Lumpur
Period27/08/1429/08/14

Keywords

  • AlGaN/GaN
  • High electron mobility transistors
  • SiC

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    Wong, Y. Y., Huang, S. C., Huang, W. C., Lumbantoruan, F., Chiu, Y. S., Wang, H. C., Yu, H. W., & Chang, E. Y. (2014). Growth parameters optimization of GaN high electron mobility transistor structure on silicon carbide substrate. In IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE (pp. 358-361). [6920872] (IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMELEC.2014.6920872