Growth orientations of semipolar ZnO on GaN(1 1 2¯ 2)

Yi Sen Shih; Pei Yin Lin; Jr Yu Chen; Li Chang

doi:10.1016/j.matlet.2014.08.132

Growth orientations of semipolar ZnO on GaN(1 1 2¯ 2)

Yi Sen Shih^*, Pei Yin Lin, Jr Yu Chen, Li Chang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

On semipolar GaN(112¯2), epitaxial ZnO grown by chemical vapor deposition can form in two different semipolar orientations as evidenced by transmission electron microscopy and X-ray diffraction. One orientation relationship is shown to be ZnO(112¯2)//GaN(112¯2) and [_1¯100]ZnO//[_1¯100]GaN which is expected for ZnO growth on GaN(112¯2), while the other is a newly found relationship of ZnO(1¯011¯)//GaN(0 0 0 2) and [_57¯23¯]ZnO//[_1¯100]GaN.

Original language	English
Pages (from-to)	96-98
Number of pages	3
Journal	Materials Letters
Volume	137
DOIs	https://doi.org/10.1016/j.matlet.2014.08.132
State	Published - 15 Dec 2014

Keywords

Electron microscopy
Thin films
X-ray techniques

Access to Document

10.1016/j.matlet.2014.08.132

Fingerprint Dive into the research topics of 'Growth orientations of semipolar ZnO on GaN(1 1 2¯ 2)'. Together they form a unique fingerprint.

Cite this

@article{0096da17025142bc94f4237f3ca5f525,

title = "Growth orientations of semipolar ZnO on GaN(1 1 2¯ 2)",

abstract = "On semipolar GaN(112¯2), epitaxial ZnO grown by chemical vapor deposition can form in two different semipolar orientations as evidenced by transmission electron microscopy and X-ray diffraction. One orientation relationship is shown to be ZnO(112¯2)//GaN(112¯2) and [1¯100]ZnO//[1¯100]GaN which is expected for ZnO growth on GaN(112¯2), while the other is a newly found relationship of ZnO(1¯011¯)//GaN(0 0 0 2) and [57¯23¯]ZnO//[1¯100]GaN.",

keywords = "Electron microscopy, Thin films, X-ray techniques",

author = "Shih, {Yi Sen} and Lin, {Pei Yin} and Chen, {Jr Yu} and Li Chang",

year = "2014",

month = dec,

day = "15",

doi = "10.1016/j.matlet.2014.08.132",

language = "English",

volume = "137",

pages = "96--98",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

}

TY - JOUR

T1 - Growth orientations of semipolar ZnO on GaN(1 1 2¯ 2)

AU - Shih, Yi Sen

AU - Lin, Pei Yin

AU - Chen, Jr Yu

AU - Chang, Li

PY - 2014/12/15

Y1 - 2014/12/15

N2 - On semipolar GaN(112¯2), epitaxial ZnO grown by chemical vapor deposition can form in two different semipolar orientations as evidenced by transmission electron microscopy and X-ray diffraction. One orientation relationship is shown to be ZnO(112¯2)//GaN(112¯2) and [1¯100]ZnO//[1¯100]GaN which is expected for ZnO growth on GaN(112¯2), while the other is a newly found relationship of ZnO(1¯011¯)//GaN(0 0 0 2) and [57¯23¯]ZnO//[1¯100]GaN.

AB - On semipolar GaN(112¯2), epitaxial ZnO grown by chemical vapor deposition can form in two different semipolar orientations as evidenced by transmission electron microscopy and X-ray diffraction. One orientation relationship is shown to be ZnO(112¯2)//GaN(112¯2) and [1¯100]ZnO//[1¯100]GaN which is expected for ZnO growth on GaN(112¯2), while the other is a newly found relationship of ZnO(1¯011¯)//GaN(0 0 0 2) and [57¯23¯]ZnO//[1¯100]GaN.

KW - Electron microscopy

KW - Thin films

KW - X-ray techniques

UR - http://www.scopus.com/inward/record.url?scp=84907545893&partnerID=8YFLogxK

U2 - 10.1016/j.matlet.2014.08.132

DO - 10.1016/j.matlet.2014.08.132

M3 - Article

AN - SCOPUS:84907545893

VL - 137

SP - 96

EP - 98

JO - Materials Letters

JF - Materials Letters

SN - 0167-577X

ER -