Growth orientations of semipolar ZnO on GaN(1 1 2¯ 2)

Yi Sen Shih*, Pei Yin Lin, Jr Yu Chen, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

On semipolar GaN(112¯2), epitaxial ZnO grown by chemical vapor deposition can form in two different semipolar orientations as evidenced by transmission electron microscopy and X-ray diffraction. One orientation relationship is shown to be ZnO(112¯2)//GaN(112¯2) and [1¯100]ZnO//[1¯100]GaN which is expected for ZnO growth on GaN(112¯2), while the other is a newly found relationship of ZnO(1¯011¯)//GaN(0 0 0 2) and [57¯23¯]ZnO//[1¯100]GaN.

Original languageEnglish
Pages (from-to)96-98
Number of pages3
JournalMaterials Letters
Volume137
DOIs
StatePublished - 15 Dec 2014

Keywords

  • Electron microscopy
  • Thin films
  • X-ray techniques

Fingerprint Dive into the research topics of 'Growth orientations of semipolar ZnO on GaN(1 1 2¯ 2)'. Together they form a unique fingerprint.

Cite this