The epitaxial growth of ZnSe layers on Si substrates utilizing a Ge/Ge 0.95Si0.05/Ge0.9Si0.1 buffer structure is demonstrated. In this study, we examine the structure, optical characteristics and atomic interdiffusion of the ZnSe epilayer grown on Si. In a sample with a 2° off-cut Si substrate, the outdiffusion of Ge into the ZnSe epilayer is suppressed. The low-temperature PL measurements indicate that the sample with a 2° off-cut Si substrate improves its optical characteristic effectively. The X-ray diffraction analysis and transmission electron microscopy (TEM) results indicate that the use of a 2° off-cut Ge/Ge 0.95Si0.05/Ge0.9Si0.1/Si substrate markedly improves the crystallinity of and reduced the number of threading dislocations in ZnSe grown on Si.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Issue number||6 B|
|State||Published - 15 Jun 2004|
- Off-cut Si substrate
- Threading dislocation
- Znse on Si