Growth of ZnSe epilayer on Si using Ge/GexSi1-x buffer structure

Tsung Hsi Yang*, Chu Shou Yang, Guangli Luo, Wu-Ching Chou, Tsung Yeh Yang, Edward Yi Chang, Chun Yen Chang

*Corresponding author for this work

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The epitaxial growth of ZnSe layers on Si substrates utilizing a Ge/Ge 0.95Si0.05/Ge0.9Si0.1 buffer structure is demonstrated. In this study, we examine the structure, optical characteristics and atomic interdiffusion of the ZnSe epilayer grown on Si. In a sample with a 2° off-cut Si substrate, the outdiffusion of Ge into the ZnSe epilayer is suppressed. The low-temperature PL measurements indicate that the sample with a 2° off-cut Si substrate improves its optical characteristic effectively. The X-ray diffraction analysis and transmission electron microscopy (TEM) results indicate that the use of a 2° off-cut Ge/Ge 0.95Si0.05/Ge0.9Si0.1/Si substrate markedly improves the crystallinity of and reduced the number of threading dislocations in ZnSe grown on Si.

Original languageEnglish
Pages (from-to)L811-L813
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number6 B
StatePublished - 15 Jun 2004


  • Gesi
  • MBE
  • Off-cut Si substrate
  • Threading dislocation
  • Znse on Si

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