Growth of ZnMgO/ZnO films on r-plane sapphires by pulsed laser deposition

Mei Hui Liang; Yen Teng Ho; Wei Lin Wang; Chun Yen Peng; Li Chang

doi:10.1016/j.jcrysgro.2007.11.158

Growth of ZnMgO/ZnO films on r-plane sapphires by pulsed laser deposition

Mei Hui Liang, Yen Teng Ho, Wei Lin Wang, Chun Yen Peng, Li Chang^*

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

High-quality ZnMgO/ZnO multi-layer thin films in a-plane orientation were grown by pulsed laser deposition on r-plane sapphires. Reflection high-energy electron diffraction (RHEED) patterns were performed to monitor the growth morphology and the epitaxy. X-ray diffraction, RHEED, and atomic force microscopy show that anisotropic growth of a-plane ZnO results in stripe morphology, and the difference of thermal expansion between ZnO and sapphire plays a significant role on the film surface smoothness. Cross-sectional transmission electron microscopy identifies the cause of disorientation of ZnO growth on sapphire.

Original language	English
Pages (from-to)	1847-1852
Number of pages	6
Journal	Journal of Crystal Growth
Volume	310
Issue number	7-9
DOIs	https://doi.org/10.1016/j.jcrysgro.2007.11.158
State	Published - 1 Apr 2008

Keywords

A1. Characterization
A3. Laser epitaxy
B1. Oxides
B2. Semiconducting II-VI materials deposition

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10.1016/j.jcrysgro.2007.11.158

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title = "Growth of ZnMgO/ZnO films on r-plane sapphires by pulsed laser deposition",

abstract = "High-quality ZnMgO/ZnO multi-layer thin films in a-plane orientation were grown by pulsed laser deposition on r-plane sapphires. Reflection high-energy electron diffraction (RHEED) patterns were performed to monitor the growth morphology and the epitaxy. X-ray diffraction, RHEED, and atomic force microscopy show that anisotropic growth of a-plane ZnO results in stripe morphology, and the difference of thermal expansion between ZnO and sapphire plays a significant role on the film surface smoothness. Cross-sectional transmission electron microscopy identifies the cause of disorientation of ZnO growth on sapphire.",

keywords = "A1. Characterization, A3. Laser epitaxy, B1. Oxides, B2. Semiconducting II-VI materials deposition",

author = "Liang, {Mei Hui} and Ho, {Yen Teng} and Wang, {Wei Lin} and Peng, {Chun Yen} and Li Chang",

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language = "English",

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AU - Liang, Mei Hui

AU - Ho, Yen Teng

AU - Wang, Wei Lin

AU - Peng, Chun Yen

AU - Chang, Li

PY - 2008/4/1

Y1 - 2008/4/1

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AB - High-quality ZnMgO/ZnO multi-layer thin films in a-plane orientation were grown by pulsed laser deposition on r-plane sapphires. Reflection high-energy electron diffraction (RHEED) patterns were performed to monitor the growth morphology and the epitaxy. X-ray diffraction, RHEED, and atomic force microscopy show that anisotropic growth of a-plane ZnO results in stripe morphology, and the difference of thermal expansion between ZnO and sapphire plays a significant role on the film surface smoothness. Cross-sectional transmission electron microscopy identifies the cause of disorientation of ZnO growth on sapphire.

KW - A1. Characterization

KW - A3. Laser epitaxy

KW - B1. Oxides

KW - B2. Semiconducting II-VI materials deposition

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