Growth of ZnMgO/ZnO films on r-plane sapphires by pulsed laser deposition

Mei Hui Liang, Yen Teng Ho, Wei Lin Wang, Chun Yen Peng, Li Chang*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

High-quality ZnMgO/ZnO multi-layer thin films in a-plane orientation were grown by pulsed laser deposition on r-plane sapphires. Reflection high-energy electron diffraction (RHEED) patterns were performed to monitor the growth morphology and the epitaxy. X-ray diffraction, RHEED, and atomic force microscopy show that anisotropic growth of a-plane ZnO results in stripe morphology, and the difference of thermal expansion between ZnO and sapphire plays a significant role on the film surface smoothness. Cross-sectional transmission electron microscopy identifies the cause of disorientation of ZnO growth on sapphire.

Original languageEnglish
Pages (from-to)1847-1852
Number of pages6
JournalJournal of Crystal Growth
Volume310
Issue number7-9
DOIs
StatePublished - 1 Apr 2008

Keywords

  • A1. Characterization
  • A3. Laser epitaxy
  • B1. Oxides
  • B2. Semiconducting II-VI materials deposition

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