Epitaxial ZnO was deposited on Si(1 1 1) substrate by atmospheric pressure metal-organic chemical vapor deposition (MOCVD) at 500 °C. A Y 2O3 buffer layer in epitaxy with Si substrate has successfully suppressed the Si oxidation before ZnO deposition. The Y 2O3 film was grown by pulsed laser deposition (PLD) on Si(1 1 1) substrate at 800 °C. Also, ZnO was deposited by PLD for comparison with MOCVD. X-ray diffraction and cross-sectional transmission electron microscopy was used to characterize microstructures of the ZnO films and their interfaces with Y2O3. The result shows ZnO(0 0 0 2) parallel to Y2O3(1 1 1). With the increase of the deposition time, the grain morphology of ZnO thin films evolved from flat structure to columnar structure. Most of the columnar ZnO grains are c-axis oriented perpendicular to the interface.
- A3. Metal-organic chemical vapor deposition
- Al. Characterization
- Al. Interfaces
- B1. Oxides
- B2. Semiconducting II-VI materials