Growth of zinc oxide thin films on Y2O3/Si substrates by chemical vapor deposition

Chih Wei Lin, Tsan Yao Cheng, Li Chang*, Jenh-Yih Juang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations

Abstract

Epitaxial ZnO was deposited on Si(1 1 1) substrate by atmospheric pressure metal-organic chemical vapor deposition (MOCVD) at 500 °C. A Y 2O3 buffer layer in epitaxy with Si substrate has successfully suppressed the Si oxidation before ZnO deposition. The Y 2O3 film was grown by pulsed laser deposition (PLD) on Si(1 1 1) substrate at 800 °C. Also, ZnO was deposited by PLD for comparison with MOCVD. X-ray diffraction and cross-sectional transmission electron microscopy was used to characterize microstructures of the ZnO films and their interfaces with Y2O3. The result shows ZnO(0 0 0 2) parallel to Y2O3(1 1 1). With the increase of the deposition time, the grain morphology of ZnO thin films evolved from flat structure to columnar structure. Most of the columnar ZnO grains are c-axis oriented perpendicular to the interface.

Original languageEnglish
JournalJournal of Crystal Growth
Volume275
Issue number1-2
DOIs
StatePublished - 15 Feb 2005

Keywords

  • A3. Metal-organic chemical vapor deposition
  • Al. Characterization
  • Al. Interfaces
  • B1. Oxides
  • B2. Semiconducting II-VI materials

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