Growth of zinc oxide nanowires on silicon (100)

Chia Ying Lee*, Tseung-Yuen Tseng, Seu Yi Li, Pang Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

60 Scopus citations

Abstract

Single crystalline zinc oxide (ZnO) nanowires have been grown on Si (100) substrates by a vapor-liquid-solid (VLS) process at temperatures in the range 850-950°C in an inert atmosphere. The VLS-grown ZnO nanowires have been characterized in detail using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), energy dispersive X-ray analysis (EDX) and photoluminescence spectroscopy (PL). The XRD studies revealed that the ZnO nanowires had wurtzite structure (hexagonal) with well-defined growth along [0001] direction. The composition analysis by EDX indicated the presence of small amounts of Si codeposited on the ZnO nanowires. The microscopic studies revealed a tilted configuration for ZnO nanowires on Si (100) with diameters in the range 60 to 100 nm and lengths varying between 1 to 3 μm. A strong ultraviolet emission has been observed for the ZnO nanowires as evidenced by the photoluminescence spectra at a wavelength of 381 nm.

Original languageEnglish
Pages (from-to)127-132
Number of pages6
JournalTamkang Journal of Science and Engineering
Volume6
Issue number2
DOIs
StatePublished - 1 Jun 2003

Keywords

  • Nanowires
  • Photoluminescence
  • Vapor-Liquid-Soild Process
  • Zinc Oxide

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