Growth of very-high-mobility AlGaSb/InAs high-electron-mobility transistor structure on si substrate for high speed electronic applications

Y. C. Lin*, H. Yamaguchi, Edward Yi Chang, Y. C. Hsieh, M. Ueki, Y. Hirayama, C. Y. Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

The growth of the AlGaSbInAs high-electron-mobility transistor (HEMT) epitaxial structure on the Si substrate is investigated. Buffer layers consisted of UHV/chemical vapor deposited grown GeGeSi and molecular beam epitaxy-grown AlGaSbAlSbGaAs were used to accommodate the strain induced by the large lattice mismatch between the AlGaSbInAs HEMT structure and the Si substrate. The crystalline quality of the structure grown was examined by x-ray diffraction, transmission electron microscopy, and atomic force microscopy. Finally, very high room-temperature electron mobility of 27 300 cm2 V s was achieved. It is demonstrated that a very-high-mobility AlGaSbInAs HEMT structure on the Si substrate can be achieved with the properly designed buffer layers.

Original languageEnglish
Article number023509
JournalApplied Physics Letters
Volume90
Issue number2
DOIs
StatePublished - 22 Jan 2007

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