Growth of vertically aligned ZnO nanorod arrays as antireflection layer on silicon solar cells

J. Y. Chen, Kien-Wen Sun*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

118 Scopus citations

Abstract

In this work we investigated the effects of growth time, spin-coating rates, and solution concentration on the reflection properties of the solution-grown ZnO nanorod arrays. The vertically aligned nanorod arrays were deposited on the surface of the Si solar cells as the antireflection (AR) layer. We found that the nanorod morphology, controlled through synthetic chemistry, has a great effect on the AR layer performance. We also demonstrated that the light harvest efficiency of the solar cells was greatly improved from 10.4% to 12.8% by using the vertically aligned ZnO nanorod arrays as the AR layer on poly-Si solar cells.

Original languageEnglish
Pages (from-to)930-934
Number of pages5
JournalSolar Energy Materials and Solar Cells
Volume94
Issue number5
DOIs
StatePublished - 1 May 2010

Keywords

  • Antireflection
  • Nanorod array
  • Solution synthesis

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