Growth of vertically aligned ZnO nanorod arrays as anti-reflection layer in silicon solar cell

J. Y. Chen, Kien-Wen Sun

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated solution-grown ZnO nanorod arrays as the anti-reflection(AR) layer for Si solar cells. The nanorod morphology, controlled through synthetic chemistry, has a great effect on the AR layer performance. We demonstrate that the light harvest efficiency of the solar cells can be greatly improved from 10.4% to 12.8% by using the vertical aligned ZnO nanorod arrays as the AR layer on poly-Si solar cells.

Original languageEnglish
Title of host publicationINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings
Pages1078-1079
Number of pages2
DOIs
StatePublished - 5 May 2010
Event2010 3rd International Nanoelectronics Conference, INEC 2010 - Hongkong, China
Duration: 3 Jan 20108 Jan 2010

Publication series

NameINEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings

Conference

Conference2010 3rd International Nanoelectronics Conference, INEC 2010
CountryChina
CityHongkong
Period3/01/108/01/10

Fingerprint Dive into the research topics of 'Growth of vertically aligned ZnO nanorod arrays as anti-reflection layer in silicon solar cell'. Together they form a unique fingerprint.

  • Cite this

    Chen, J. Y., & Sun, K-W. (2010). Growth of vertically aligned ZnO nanorod arrays as anti-reflection layer in silicon solar cell. In INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings (pp. 1078-1079). [5425023] (INEC 2010 - 2010 3rd International Nanoelectronics Conference, Proceedings). https://doi.org/10.1109/INEC.2010.5425023