Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment

Chih Jen Hsiao, Minh Thien Huu Ha, Ching Yi Hsu, Yueh Chin Lin, Sheng Po Chang, Shoou Jinn Chang*, Edward Yi Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

GaSb epitaxial layers were directly grown on GaAs substrates by metal-organic chemical vapor deposition involving Sb interfacial treatment with optimized growth temperature and V/III ratio. The interfacial treatment effectively reduces the surface energy and strain energy difference, resulting in a quasi-2D growth mode. When the GaSb layer was grown at 520 °C, the strain induced by lattice mismatch was accommodated by 90° dislocations with a period of 5.67 nm. By optimizing the V/III ratio, the surface roughness of the ultrathin GaSb/GaAs heterostructure was reduced, resulting in a reduced carrier scattering and improved electronic properties.

Original languageEnglish
Article number095502
JournalApplied Physics Express
Volume9
Issue number9
DOIs
StatePublished - 1 Sep 2016

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