Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment

Chih Jen Hsiao; Minh Thien Huu Ha; Ching Yi Hsu; Yueh Chin Lin; Sheng Po Chang; Shoou Jinn Chang; Edward Yi Chang

doi:10.7567/APEX.9.095502

Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment

Chih Jen Hsiao, Minh Thien Huu Ha, Ching Yi Hsu, Yueh Chin Lin, Sheng Po Chang, Shoou Jinn Chang^*, Edward Yi Chang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

GaSb epitaxial layers were directly grown on GaAs substrates by metal-organic chemical vapor deposition involving Sb interfacial treatment with optimized growth temperature and V/III ratio. The interfacial treatment effectively reduces the surface energy and strain energy difference, resulting in a quasi-2D growth mode. When the GaSb layer was grown at 520 °C, the strain induced by lattice mismatch was accommodated by 90° dislocations with a period of 5.67 nm. By optimizing the V/III ratio, the surface roughness of the ultrathin GaSb/GaAs heterostructure was reduced, resulting in a reduced carrier scattering and improved electronic properties.

Original language	English
Article number	095502
Journal	Applied Physics Express
Volume	9
Issue number	9
DOIs	https://doi.org/10.7567/APEX.9.095502
State	Published - 1 Sep 2016

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@article{2343195ad7424f0583bc45c4a8543141,

title = "Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment",

abstract = "GaSb epitaxial layers were directly grown on GaAs substrates by metal-organic chemical vapor deposition involving Sb interfacial treatment with optimized growth temperature and V/III ratio. The interfacial treatment effectively reduces the surface energy and strain energy difference, resulting in a quasi-2D growth mode. When the GaSb layer was grown at 520 °C, the strain induced by lattice mismatch was accommodated by 90° dislocations with a period of 5.67 nm. By optimizing the V/III ratio, the surface roughness of the ultrathin GaSb/GaAs heterostructure was reduced, resulting in a reduced carrier scattering and improved electronic properties.",

author = "Hsiao, {Chih Jen} and Ha, {Minh Thien Huu} and Hsu, {Ching Yi} and Lin, {Yueh Chin} and Chang, {Sheng Po} and Chang, {Shoou Jinn} and Chang, {Edward Yi}",

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Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment. / Hsiao, Chih Jen; Ha, Minh Thien Huu; Hsu, Ching Yi; Lin, Yueh Chin; Chang, Sheng Po; Chang, Shoou Jinn; Chang, Edward Yi.

In: Applied Physics Express, Vol. 9, No. 9, 095502, 01.09.2016.

Research output: Contribution to journal › Article › peer-review

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AU - Hsiao, Chih Jen

AU - Ha, Minh Thien Huu

AU - Hsu, Ching Yi

AU - Lin, Yueh Chin

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Chang, Edward Yi

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