Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment

Chih Jen Hsiao; Minh Thien Huu Ha; Ching Yi Hsu; Yueh Chin Lin; Sheng Po Chang; Shoou Jinn Chang; Edward Yi Chang

doi:10.7567/APEX.9.095502

Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment

Chih Jen Hsiao, Minh Thien Huu Ha, Ching Yi Hsu, Yueh Chin Lin, Sheng Po Chang, Shoou Jinn Chang^*, Edward Yi Chang

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article

6 Scopus citations

Abstract

GaSb epitaxial layers were directly grown on GaAs substrates by metal-organic chemical vapor deposition involving Sb interfacial treatment with optimized growth temperature and V/III ratio. The interfacial treatment effectively reduces the surface energy and strain energy difference, resulting in a quasi-2D growth mode. When the GaSb layer was grown at 520 °C, the strain induced by lattice mismatch was accommodated by 90° dislocations with a period of 5.67 nm. By optimizing the V/III ratio, the surface roughness of the ultrathin GaSb/GaAs heterostructure was reduced, resulting in a reduced carrier scattering and improved electronic properties.

Original language	English
Article number	095502
Journal	Applied Physics Express
Volume	9
Issue number	9
DOIs	https://doi.org/10.7567/APEX.9.095502
State	Published - 1 Sep 2016

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Hsiao, C. J., Ha, M. T. H., Hsu, C. Y., Lin, Y. C., Chang, S. P., Chang, S. J., & Chang, E. Y. (2016). Growth of ultrathin GaSb layer on GaAs using metal-organic chemical vapor deposition with Sb interfacial treatment. Applied Physics Express, 9(9), [095502]. https://doi.org/10.7567/APEX.9.095502

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abstract = "GaSb epitaxial layers were directly grown on GaAs substrates by metal-organic chemical vapor deposition involving Sb interfacial treatment with optimized growth temperature and V/III ratio. The interfacial treatment effectively reduces the surface energy and strain energy difference, resulting in a quasi-2D growth mode. When the GaSb layer was grown at 520 °C, the strain induced by lattice mismatch was accommodated by 90° dislocations with a period of 5.67 nm. By optimizing the V/III ratio, the surface roughness of the ultrathin GaSb/GaAs heterostructure was reduced, resulting in a reduced carrier scattering and improved electronic properties.",

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AU - Hsu, Ching Yi

AU - Lin, Yueh Chin

AU - Chang, Sheng Po

AU - Chang, Shoou Jinn

AU - Chang, Edward Yi

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