Growth of thin niobium crystals by the strain-anneal method

S. R. Stock*, Haydn Chen, H. K. Birnbaum

*Corresponding author for this work

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

A technique suitable for the growth of thin, niobium single crystals is described. Crystals with thicknesses ranging between 25 μ m and 7 mm were grown. These crystals are highly perfect and require no preparation, other than a light chemical polish, prior to being studied directly with X-ray topography. Laboratory double crystal and synchrotron white beam topography showed that dislocation densities were less than 104 cm-2 in carefully handled crystals. The particular advantage of this method is the minimal specimen preparation which is required.

Original languageEnglish
Pages (from-to)419-424
Number of pages6
JournalJournal of Crystal Growth
Volume84
Issue number3
DOIs
StatePublished - 1 Jan 1987

Fingerprint Dive into the research topics of 'Growth of thin niobium crystals by the strain-anneal method'. Together they form a unique fingerprint.

  • Cite this