Abstract
A technique suitable for the growth of thin, niobium single crystals is described. Crystals with thicknesses ranging between 25 μ m and 7 mm were grown. These crystals are highly perfect and require no preparation, other than a light chemical polish, prior to being studied directly with X-ray topography. Laboratory double crystal and synchrotron white beam topography showed that dislocation densities were less than 104 cm-2 in carefully handled crystals. The particular advantage of this method is the minimal specimen preparation which is required.
| Original language | English |
|---|---|
| Pages (from-to) | 419-424 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 84 |
| Issue number | 3 |
| DOIs | |
| State | Published - 1 Jan 1987 |
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Stock, S. R., Chen, H., & Birnbaum, H. K. (1987). Growth of thin niobium crystals by the strain-anneal method. Journal of Crystal Growth, 84(3), 419-424. https://doi.org/10.1016/0022-0248(87)90271-5