Growth of thin niobium crystals by the strain-anneal method

S. R. Stock; Haydn Chen; H. K. Birnbaum

doi:10.1016/0022-0248(87)90271-5

Growth of thin niobium crystals by the strain-anneal method

S. R. Stock^*, Haydn Chen, H. K. Birnbaum

^*Corresponding author for this work

International College of Semiconductor Technology

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

A technique suitable for the growth of thin, niobium single crystals is described. Crystals with thicknesses ranging between 25 μ m and 7 mm were grown. These crystals are highly perfect and require no preparation, other than a light chemical polish, prior to being studied directly with X-ray topography. Laboratory double crystal and synchrotron white beam topography showed that dislocation densities were less than 10⁴ cm^-2 in carefully handled crystals. The particular advantage of this method is the minimal specimen preparation which is required.

Original language	English
Pages (from-to)	419-424
Number of pages	6
Journal	Journal of Crystal Growth
Volume	84
Issue number	3
DOIs	https://doi.org/10.1016/0022-0248(87)90271-5
State	Published - 1 Jan 1987

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title = "Growth of thin niobium crystals by the strain-anneal method",

abstract = "A technique suitable for the growth of thin, niobium single crystals is described. Crystals with thicknesses ranging between 25 μ m and 7 mm were grown. These crystals are highly perfect and require no preparation, other than a light chemical polish, prior to being studied directly with X-ray topography. Laboratory double crystal and synchrotron white beam topography showed that dislocation densities were less than 104 cm-2 in carefully handled crystals. The particular advantage of this method is the minimal specimen preparation which is required.",

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N2 - A technique suitable for the growth of thin, niobium single crystals is described. Crystals with thicknesses ranging between 25 μ m and 7 mm were grown. These crystals are highly perfect and require no preparation, other than a light chemical polish, prior to being studied directly with X-ray topography. Laboratory double crystal and synchrotron white beam topography showed that dislocation densities were less than 104 cm-2 in carefully handled crystals. The particular advantage of this method is the minimal specimen preparation which is required.

AB - A technique suitable for the growth of thin, niobium single crystals is described. Crystals with thicknesses ranging between 25 μ m and 7 mm were grown. These crystals are highly perfect and require no preparation, other than a light chemical polish, prior to being studied directly with X-ray topography. Laboratory double crystal and synchrotron white beam topography showed that dislocation densities were less than 104 cm-2 in carefully handled crystals. The particular advantage of this method is the minimal specimen preparation which is required.

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