Growth of ternary WCxNy thin films from a single-source precursor, W(NtBu)2(NEt2) 2

Shiow Huey Chuang*, Hsin-Tien Chiu, Yi Hsuan Chou, Shiou Fan Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

An organoimido complex of tungsten, bis(tertbutylimido)bis(diethylamido) tungsten, W(NtBu)2(NEt2)2, is used as a single source precursor to deposit thin films of cubic phase tungsten carbonitride, WCxNy (x: 0.21-0.38, y: 0.62-0.76), by metal-organic chemical vapor deposition on silicon substrates. In general, the N/W and C/W ratios decreased from 0.76 to 0.62 and 0.38 to 0.21, respectively with increasing the temperature of deposition from 500 to 650 °C. Based on the elemental composition and the composition of the gas phase products, it is proposed that the carbon and nitrogen atoms were incorporated through the activation of the ligands.

Original languageEnglish
Pages (from-to)1391-1395
Number of pages5
JournalJournal of the Chinese Chemical Society
Volume53
Issue number6
DOIs
StatePublished - 1 Jan 2006

Keywords

  • Chemical vapor deposition
  • Tungsten carbonitride
  • Tungsten nitride

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