Growth of ternary Si1-x-yGexCy thin films from a single-source precursor, Ge(SiMe3)

Hsin-Tien Chiu, Ching Shing Shie, Shiow Huey Chuang

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Abstract

Ge(SiMe3)4 was used as a single-source precursor to deposit thin films of alloys of germanium, silicon, and carbon, Si1-x-yGexCy, by low-pressure chemical vapor deposition on silicon substrates at temperatures 873-973 K. X-ray diffraction studies indicated that the films grown above 898 K were cubic phase (± = 0.441-0.442 nm). Infrared spectra of the films showed a major absorption near 783 cm-1. X-ray photoelectron spectra of a typical thin film showed binding energies of Ge3d, Si2p, and C1s electrons at 30.0, 100.6, and 283.2 eV, respectively. As determined by wavelength dispersive spectroscopy, v was 0.07-0.15 and y was 0.43-0.50, indicating that the films contained 7-15% Ge, 38-43% Si, and 43-50% C. At 973 K, the C/(Si + Ge) ratio was 1. Based on these data, the films deposited above 898 K have a structure of ²-SiC with Ge atoms replacing some Si atoms in the lattice.

Original languageEnglish
Pages (from-to)2257-2259
Number of pages3
JournalJournal of Materials Research
Volume10
Issue number9
DOIs
StatePublished - 1 Jan 1995

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