Growth of strain InAs-channel quantum well FETs on si substrate using SiGe buffer

Edward Yi Chang; Shih Hsuan Tang; Yueh Chin Lin; Yen Chang Hsieh

doi:10.1149/1.2911505

Growth of strain InAs-channel quantum well FETs on si substrate using SiGe buffer

Edward Yi Chang, Shih Hsuan Tang, Yueh Chin Lin, Yen Chang Hsieh

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The growth of the A1GaSb/InAs quantum well field effect transistor(QWFET) epitaxial structure on the Si substrate has been investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge/GeSi and molecular beam epitaxy-grown A1GaSb/A1Sb/GaAs were used to accommodate the strain induced by the large lattice mismatch between the A1GaSb/InAs QWFET structure and the Si substrate. A very high room-temperature electron mobility of 27300 cm ² /V s was achieved. Strained QWFET was also grown on the GaAs substrate, it is found that the strained QWFET grown on the Si substrate has higher electron mobility due to high strain induced in this structure.

Original language	English
Title of host publication	ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
Subtitle of host publication	New Materials, Processes, and Equipment
Pages	243-252
Number of pages	10
Edition	1
DOIs	https://doi.org/10.1149/1.2911505
State	Published - 13 Nov 2008
Event	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States Duration: 18 May 2008 → 22 May 2008

Publication series

Name	ECS Transactions
Number	1
Volume	13
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4
Country	United States
City	Phoenix, AZ
Period	18/05/08 → 22/05/08

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Chang, E. Y., Tang, S. H., Lin, Y. C., & Hsieh, Y. C. (2008). Growth of strain InAs-channel quantum well FETs on si substrate using SiGe buffer. In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment (1 ed., pp. 243-252). (ECS Transactions; Vol. 13, No. 1). https://doi.org/10.1149/1.2911505

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title = "Growth of strain InAs-channel quantum well FETs on si substrate using SiGe buffer",

abstract = "The growth of the A1GaSb/InAs quantum well field effect transistor(QWFET) epitaxial structure on the Si substrate has been investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge/GeSi and molecular beam epitaxy-grown A1GaSb/A1Sb/GaAs were used to accommodate the strain induced by the large lattice mismatch between the A1GaSb/InAs QWFET structure and the Si substrate. A very high room-temperature electron mobility of 27300 cm 2 /V s was achieved. Strained QWFET was also grown on the GaAs substrate, it is found that the strained QWFET grown on the Si substrate has higher electron mobility due to high strain induced in this structure.",

author = "Chang, {Edward Yi} and Tang, {Shih Hsuan} and Lin, {Yueh Chin} and Hsieh, {Yen Chang}",

year = "2008",

month = nov,

day = "13",

doi = "10.1149/1.2911505",

language = "English",

isbn = "9781566776264",

series = "ECS Transactions",

number = "1",

pages = "243--252",

booktitle = "ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4",

edition = "1",

note = "null ; Conference date: 18-05-2008 Through 22-05-2008",

}

Chang, EY, Tang, SH, Lin, YC & Hsieh, YC 2008, Growth of strain InAs-channel quantum well FETs on si substrate using SiGe buffer. in ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1 edn, ECS Transactions, no. 1, vol. 13, pp. 243-252, Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4, Phoenix, AZ, United States, 18/05/08. https://doi.org/10.1149/1.2911505

Growth of strain InAs-channel quantum well FETs on si substrate using SiGe buffer. / Chang, Edward Yi; Tang, Shih Hsuan; Lin, Yueh Chin; Hsieh, Yen Chang.

ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment. 1. ed. 2008. p. 243-252 (ECS Transactions; Vol. 13, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Growth of strain InAs-channel quantum well FETs on si substrate using SiGe buffer

AU - Chang, Edward Yi

AU - Tang, Shih Hsuan

AU - Lin, Yueh Chin

AU - Hsieh, Yen Chang

PY - 2008/11/13

Y1 - 2008/11/13

N2 - The growth of the A1GaSb/InAs quantum well field effect transistor(QWFET) epitaxial structure on the Si substrate has been investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge/GeSi and molecular beam epitaxy-grown A1GaSb/A1Sb/GaAs were used to accommodate the strain induced by the large lattice mismatch between the A1GaSb/InAs QWFET structure and the Si substrate. A very high room-temperature electron mobility of 27300 cm 2 /V s was achieved. Strained QWFET was also grown on the GaAs substrate, it is found that the strained QWFET grown on the Si substrate has higher electron mobility due to high strain induced in this structure.

AB - The growth of the A1GaSb/InAs quantum well field effect transistor(QWFET) epitaxial structure on the Si substrate has been investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge/GeSi and molecular beam epitaxy-grown A1GaSb/A1Sb/GaAs were used to accommodate the strain induced by the large lattice mismatch between the A1GaSb/InAs QWFET structure and the Si substrate. A very high room-temperature electron mobility of 27300 cm 2 /V s was achieved. Strained QWFET was also grown on the GaAs substrate, it is found that the strained QWFET grown on the Si substrate has higher electron mobility due to high strain induced in this structure.

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BT - ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4

Y2 - 18 May 2008 through 22 May 2008

ER -

Growth of strain InAs-channel quantum well FETs on si substrate using SiGe buffer

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