Growth of strain InAs-channel quantum well FETs on si substrate using SiGe buffer

Edward Yi Chang, Shih Hsuan Tang, Yueh Chin Lin, Yen Chang Hsieh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The growth of the A1GaSb/InAs quantum well field effect transistor(QWFET) epitaxial structure on the Si substrate has been investigated. Buffer layers consisted of UHV/chemical vapor deposited grown Ge/GeSi and molecular beam epitaxy-grown A1GaSb/A1Sb/GaAs were used to accommodate the strain induced by the large lattice mismatch between the A1GaSb/InAs QWFET structure and the Si substrate. A very high room-temperature electron mobility of 27300 cm 2 /V s was achieved. Strained QWFET was also grown on the GaAs substrate, it is found that the strained QWFET grown on the Si substrate has higher electron mobility due to high strain induced in this structure.

Original languageEnglish
Title of host publicationECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages243-252
Number of pages10
Edition1
DOIs
StatePublished - 13 Nov 2008
EventAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4 - Phoenix, AZ, United States
Duration: 18 May 200822 May 2008

Publication series

NameECS Transactions
Number1
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceAdvanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, 4
CountryUnited States
CityPhoenix, AZ
Period18/05/0822/05/08

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