Growth of semipolar InN(101̄3) on LaAlO3(112) substrate

Wei Chun Chen*, Jr Sheng Tian, Wei Lin Wang, Yen Teng Ho, Li Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

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Abstract

In this study, we report the growth and characterization of semipolar (101̄3) InN films grown on LaAlO3(112) substrate by metalorganic molecular beam epitaxy. InN films were grown at various substrate temperatures in the range of 465-540 °C. Structural and optical properties of semipolar InN were investigated by high resolution X-ray diffraction, scanning electron microscopy, and photoluminescence measurements. The results show that semipolar (101̄3) InN layers can be grown at 510 °C with the full-width at half maximum of the X-ray rocking curve about 1400 arcsec and electron mobility of 494 cm2 V-1 s-1.

Original languageEnglish
Article number04DH11
JournalJapanese Journal of Applied Physics
Volume50
Issue number4 PART 2
DOIs
StatePublished - 1 Apr 2011

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