Growth of semi-polar GaN-based light-emitting diodes grown on an patterned Si substrate

Ching Hsueh Chiu*, Da Wei Lin, Zhen Yu Li, Shih Chun Ling, Hao-Chung Kuo, Tien-chang Lu, Shing Chung Wang, Wei Tasi Liao, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Nobuhiko Sawaki

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

We present a study of semi-polar (1-1̄01) InGaN-based light emitting diodes (LEDs) grown on patterned (001) Si substrates by atmospheric-pressure metal organic chemical vapor deposition. A transmission electron microscopy image of the semi-polar template shows that the threading dislocation density was decreased significantly. From electroluminescence measurement, semi-polar LEDs exhibit little blue-shift and low efficiency droop at a high injection current because the reduction of the polarization field not only made the band diagram smoother but also restricted electron overflow to the p-GaN layer as shown in simulations. These results indicate that semi-polar InGaN-based LEDs can possess a high radiative recombination rate and low efficiency droop at a high injection current.

Original languageEnglish
Title of host publicationGallium Nitride Materials and Devices VI
Number of pages5
DOIs
StatePublished - 13 May 2011
EventGallium Nitride Materials and Devices VI - San Francisco, CA, United States
Duration: 24 Jan 201127 Jan 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7939
ISSN (Print)0277-786X

Conference

ConferenceGallium Nitride Materials and Devices VI
CountryUnited States
CitySan Francisco, CA
Period24/01/1127/01/11

Keywords

  • efficiency droop
  • LEDs
  • MOCVDs
  • semi-polar
  • Si

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