Growth of polycrystalline tubular silicon carbide yajima-type reaction at the vapor-solid interface

Chia Hsin Wang, Huang Kai Lin, Tsung Ying Ke, Thomas Joseph Palathinkal, Nyan Hwa Tai, I. Nan Lin, Chi Young Lee, Hsin-Tien Chiu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Polycrystalline tubular SiC on Si is prepared by reacting MeSiHCl 2 vapor and Ca thin film on Si at 773-923 K followed by heat treatment at 1273 K. The reaction is a solvent-free Yajima-type process taking place at the vapor-solid interface. The products phase-segregate into a cable-like radial heterostructure composed of a core of CaCl2 and a shell of SiCxHy. After removal of the CaCl2 core, the layer of polycrystalline SiC tubes on Si can emit electrons at a low applied field of 2.5 V/μm with a current of 10 μA/cm2.

Original languageEnglish
Pages (from-to)3956-3962
Number of pages7
JournalChemistry of Materials
Volume19
Issue number16
DOIs
StatePublished - 7 Aug 2007

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