Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition

Tung Po Hsieh; Hsiang Szu Chang; Wen Yen Chen; Wen-Hao Chang; Tzu Min Hsu; Nien Tze Yeh; Wen Jeng Ho; Pei Chin Chiu; Jen Inn Chyi

doi:10.1088/0957-4484/17/2/028

Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition

Tung Po Hsieh^*, Hsiang Szu Chang, Wen Yen Chen, Wen-Hao Chang, Tzu Min Hsu, Nien Tze Yeh, Wen Jeng Ho, Pei Chin Chiu, Jen Inn Chyi

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report the preparation of low density self-assembled InGaAs on GaAs grown by metal-organic chemical vapour deposition for single photon sources. Through using a set of optimized growth parameters, including the arsine partial pressure, total coverage of quantum dots, and growth temperature, high optical quality quantum dots with density as low as 5 × 10⁶ cm ^-2 have been obtained. Using local optical excitation through a sub-micron aperture of a single quantum dot, its spectral lines associated with the exciton, biexciton, multi-exciton, and charged exciton have been resolved and identified. Photon correlation measurements show that the single quantum dot can successfully emit antibunched photons.

Original language	English
Pages (from-to)	512-515
Number of pages	4
Journal	Nanotechnology
Volume	17
Issue number	2
DOIs	https://doi.org/10.1088/0957-4484/17/2/028
State	Published - 28 Jan 2006

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title = "Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition",

abstract = "We report the preparation of low density self-assembled InGaAs on GaAs grown by metal-organic chemical vapour deposition for single photon sources. Through using a set of optimized growth parameters, including the arsine partial pressure, total coverage of quantum dots, and growth temperature, high optical quality quantum dots with density as low as 5 × 106 cm -2 have been obtained. Using local optical excitation through a sub-micron aperture of a single quantum dot, its spectral lines associated with the exciton, biexciton, multi-exciton, and charged exciton have been resolved and identified. Photon correlation measurements show that the single quantum dot can successfully emit antibunched photons.",

author = "Hsieh, {Tung Po} and Chang, {Hsiang Szu} and Chen, {Wen Yen} and Wen-Hao Chang and Hsu, {Tzu Min} and Yeh, {Nien Tze} and Ho, {Wen Jeng} and Chiu, {Pei Chin} and Chyi, {Jen Inn}",

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doi = "10.1088/0957-4484/17/2/028",

language = "English",

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pages = "512--515",

journal = "Nanotechnology",

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number = "2",

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Growth of low density InGaAs quantum dots for single photon sources by metal-organic chemical vapour deposition. / Hsieh, Tung Po; Chang, Hsiang Szu; Chen, Wen Yen; Chang, Wen-Hao; Hsu, Tzu Min; Yeh, Nien Tze; Ho, Wen Jeng; Chiu, Pei Chin; Chyi, Jen Inn.

In: Nanotechnology, Vol. 17, No. 2, 28.01.2006, p. 512-515.

Research output: Contribution to journal › Article › peer-review

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AU - Hsieh, Tung Po

AU - Chang, Hsiang Szu

AU - Chen, Wen Yen

AU - Chang, Wen-Hao

AU - Hsu, Tzu Min

AU - Yeh, Nien Tze

AU - Ho, Wen Jeng

AU - Chiu, Pei Chin

AU - Chyi, Jen Inn

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AB - We report the preparation of low density self-assembled InGaAs on GaAs grown by metal-organic chemical vapour deposition for single photon sources. Through using a set of optimized growth parameters, including the arsine partial pressure, total coverage of quantum dots, and growth temperature, high optical quality quantum dots with density as low as 5 × 106 cm -2 have been obtained. Using local optical excitation through a sub-micron aperture of a single quantum dot, its spectral lines associated with the exciton, biexciton, multi-exciton, and charged exciton have been resolved and identified. Photon correlation measurements show that the single quantum dot can successfully emit antibunched photons.

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