Growth of lattice-matched InAlN/GaN on Si (111) substrate for ultraviolet photodiode application

Binh Tinh Tran, Edward Yi Chang

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

In this paper, we report on the growth of high quality InxAl1-xN/GaN hetero-structures on Si substrate by metal organic chemical vapor deposition with various indium compositions (x = 10.2, 16.2 and 17.6%). The lattice-matched In0.176Al0.838N/GaN structure shows a smooth surface with good crystalline quality. In addition, the ultraviolet photodiode device shows excellent device characteristics with a low leakage current of 0.12 μA, and a high spectral response. It has good quantum efficiency of 94 mA/W and 44% at 265 nm which is comparable to that of the InAlN photodiode grown on sapphire substrate.

Original languageEnglish
Pages (from-to)705-708
Number of pages4
JournalElectronic Materials Letters
Volume9
Issue number5
DOIs
StatePublished - 1 Sep 2013

Keywords

  • InAlN
  • lattice-matched
  • photodiode
  • Si

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