Growth of lattice-matched InAlN/GaN on Si (111) substrate for ultraviolet photodiode application

Binh Tinh Tran; Edward Yi Chang

doi:10.1007/s13391-013-2254-8

Growth of lattice-matched InAlN/GaN on Si (111) substrate for ultraviolet photodiode application

Binh Tinh Tran, Edward Yi Chang

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

In this paper, we report on the growth of high quality In_xAl_1-xN/GaN hetero-structures on Si substrate by metal organic chemical vapor deposition with various indium compositions (x = 10.2, 16.2 and 17.6%). The lattice-matched In_0.176Al_0.838N/GaN structure shows a smooth surface with good crystalline quality. In addition, the ultraviolet photodiode device shows excellent device characteristics with a low leakage current of 0.12 μA, and a high spectral response. It has good quantum efficiency of 94 mA/W and 44% at 265 nm which is comparable to that of the InAlN photodiode grown on sapphire substrate.

Original language	English
Pages (from-to)	705-708
Number of pages	4
Journal	Electronic Materials Letters
Volume	9
Issue number	5
DOIs	https://doi.org/10.1007/s13391-013-2254-8
State	Published - 1 Sep 2013

Keywords

InAlN
lattice-matched
photodiode
Si

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10.1007/s13391-013-2254-8

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title = "Growth of lattice-matched InAlN/GaN on Si (111) substrate for ultraviolet photodiode application",

abstract = "In this paper, we report on the growth of high quality InxAl1-xN/GaN hetero-structures on Si substrate by metal organic chemical vapor deposition with various indium compositions (x = 10.2, 16.2 and 17.6%). The lattice-matched In0.176Al0.838N/GaN structure shows a smooth surface with good crystalline quality. In addition, the ultraviolet photodiode device shows excellent device characteristics with a low leakage current of 0.12 μA, and a high spectral response. It has good quantum efficiency of 94 mA/W and 44% at 265 nm which is comparable to that of the InAlN photodiode grown on sapphire substrate.",

keywords = "InAlN, lattice-matched, photodiode, Si",

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journal = "Electronic Materials Letters",

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AU - Tran, Binh Tinh

AU - Chang, Edward Yi

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N2 - In this paper, we report on the growth of high quality InxAl1-xN/GaN hetero-structures on Si substrate by metal organic chemical vapor deposition with various indium compositions (x = 10.2, 16.2 and 17.6%). The lattice-matched In0.176Al0.838N/GaN structure shows a smooth surface with good crystalline quality. In addition, the ultraviolet photodiode device shows excellent device characteristics with a low leakage current of 0.12 μA, and a high spectral response. It has good quantum efficiency of 94 mA/W and 44% at 265 nm which is comparable to that of the InAlN photodiode grown on sapphire substrate.

AB - In this paper, we report on the growth of high quality InxAl1-xN/GaN hetero-structures on Si substrate by metal organic chemical vapor deposition with various indium compositions (x = 10.2, 16.2 and 17.6%). The lattice-matched In0.176Al0.838N/GaN structure shows a smooth surface with good crystalline quality. In addition, the ultraviolet photodiode device shows excellent device characteristics with a low leakage current of 0.12 μA, and a high spectral response. It has good quantum efficiency of 94 mA/W and 44% at 265 nm which is comparable to that of the InAlN photodiode grown on sapphire substrate.

KW - InAlN

KW - lattice-matched

KW - photodiode

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