Abstract
In this paper, we report on the growth of high quality InxAl1-xN/GaN hetero-structures on Si substrate by metal organic chemical vapor deposition with various indium compositions (x = 10.2, 16.2 and 17.6%). The lattice-matched In0.176Al0.838N/GaN structure shows a smooth surface with good crystalline quality. In addition, the ultraviolet photodiode device shows excellent device characteristics with a low leakage current of 0.12 μA, and a high spectral response. It has good quantum efficiency of 94 mA/W and 44% at 265 nm which is comparable to that of the InAlN photodiode grown on sapphire substrate.
Original language | English |
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Pages (from-to) | 705-708 |
Number of pages | 4 |
Journal | Electronic Materials Letters |
Volume | 9 |
Issue number | 5 |
DOIs | |
State | Published - 1 Sep 2013 |
Keywords
- InAlN
- lattice-matched
- photodiode
- Si