A series of highly strained InGaAs quantum wells (QWs) with GaAs barriers emitting at wavelength longer than 1.2 μm are grown on GaAs substrates by metalorganic chemical vapor deposition (MOCVD). The optimized windows of the V/III ratio of the InGaAs layer and the growth rate of the barrier are first investigated on thease highly strained QWs. By an appropriate choice of the growth conditions, we extend the room-temperature photoluminescence (PL) wavelength of InGaAs QWs to 1245 nm, which corresponds to an indium content of 42%. A GaAs-based InGaAs vertical-cavity surface-emitting laser (VCSEL) at an emission wavelength of 1.28 μm with a large detuning of 90 nm has been realized by the use of highly strained InGaAs Qws.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|State||Published - 31 Jan 2006|