Growth of high quality ZnSe epilayer on Si (100)

Tsung Hsi Yang*, Jui Tai Ku, Guangli Luo, Wu-Ching Chou, Tsung Yeh Yang, Chun Yen Chung

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Growth of high quality ZnSe epilayer on Ge/GeSi/Si (100) was demonstrated by using low temperature migration enhance epitaxy (LT-MEE) and LT-ZnSe buffer layer. In this study, the low dislocation density of Ge/GeSi/Si structure was grown utilizing an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system. The LT-MEE and LT-ZnSe buffer layer was grown employing molecular beam epitaxy (MBE) system for suppressing the formation of the deep-level emission (DLE) in the ZnSe/Ge/GeSi/Si structure. The low-temperature PL measurements indicate thai the sample with a LT-MEE and LT-ZnSe buffer layer can improve its optical characteristic effectively. The X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) results indicate that the use of a LT-MEE and LT-ZnSe buffer layer markedly improves the crystallinity of the ZnSe epilayer and reduced the number of dislocations in ZnSe epilayer grown-up on Ge/GeSi/Si. copyright The Electrochemical Society.

Original languageEnglish
Pages (from-to)223-229
Number of pages7
JournalECS Transactions
Volume3
Issue number5
DOIs
StatePublished - 1 Dec 2006
EventState-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting - Cancun, Mexico
Duration: 29 Oct 20063 Nov 2006

Keywords

  • DLE
  • GeSi
  • MEE
  • ZnSe
  • ZnSe on Si

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