Growth of high quality ZnSe epilayer on Ge/GeSi/Si (100) was demonstrated by using low temperature migration enhance epitaxy (LT-MEE) and LT-ZnSe buffer layer. In this study, the low dislocation density of Ge/GeSi/Si structure was grown utilizing an ultrahigh vacuum chemical vapor deposition (UHV/CVD) system. The LT-MEE and LT-ZnSe buffer layer was grown employing molecular beam epitaxy (MBE) system for suppressing the formation of the deep-level emission (DLE) in the ZnSe/Ge/GeSi/Si structure. The low-temperature PL measurements indicate thai the sample with a LT-MEE and LT-ZnSe buffer layer can improve its optical characteristic effectively. The X-ray diffraction (XRD) analysis and transmission electron microscopy (TEM) results indicate that the use of a LT-MEE and LT-ZnSe buffer layer markedly improves the crystallinity of the ZnSe epilayer and reduced the number of dislocations in ZnSe epilayer grown-up on Ge/GeSi/Si. copyright The Electrochemical Society.
|Number of pages||7|
|State||Published - 1 Dec 2006|
|Event||State-of-the-Art Program on Compound Semiconductors 45 (SOTAPOCS 45) -and- Wide Bandgap Semiconductor Materials and Devices 7 - 210th Electrochemical Society Meeting - Cancun, Mexico|
Duration: 29 Oct 2006 → 3 Nov 2006
- ZnSe on Si