Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal-oxide-semiconductor applications

Sa Hoang Huynh, Minh Thien Huu Ha, Huy Binh Do, Tuan Anh Nguyen, Hung Wei Yu, Quang Ho Luc, Edward Yi Chang

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Abstract

The growth of high-quality In0.28Ga0.72Sb epilayer on an AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition is demonstrated. The In0.28Ga0.72Sb epilayer has a fully relaxed surface roughness of ∼1.0 nm and a low threading dislocation density of ∼6.2 × 106 cm-2. The valence band offset (VBO) of 3.11eV and conduction band offset (CBO) of 3.21eV for an Al2O3/In0.28Ga0.72Sb interface extracted from X-ray photoemission spectroscopy data highlight its suitability for use in single-channel InGaSb-based complementary metal-oxide-semiconductor (CMOS) applications. The type-I straddling gap of an In0.28Ga0.72Sb/AlSb heterojunction with a VBO of 0.47 eV and CBO of 0.65eV is also sufficient to prevent both electron and hole leakage currents in CMOS devices.

Original languageEnglish
Article number075505
JournalApplied Physics Express
Volume10
Issue number7
DOIs
StatePublished - 1 Jul 2017

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