Growth of high performance InGaAs/InP doped channel heterojunction field effect transistor with a strained GaInP Schottky barrier enhancement layer by gas source molecular beam epitaxy

Hao-Chung Kuo*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this article, we present a systematic investigation of the Schottky characteristics of metal/ Ga0.2In0.8P/InP. It is found that barrier heights of 0.6-0.7 eV are achieved for Schottky junctions formed on Ga0.2In0.8P/InP. Fermi level pinning occurs at the surface of the wet-etched Ga0.2In0.8P prior to metallization. No degradation in the Schottky characteristics is observed at temperatures as high as 250 °C. InGaAs/InP doped channel heterojunction field-effect transistors (HFETs) with a Ga0.2In0.8P Schottky barrier enhancement layer (SBEL) were grown and fabricated. The 0.25 μm gate-length devices show excellent dc and rf performance, with an ft of 117 GHz and an fmax of 168 GHz. These results suggest that GaInP is a promising material as a gate SBEL for InP based HFET applications.

Original languageEnglish
Pages (from-to)1139-1143
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume17
Issue number3
DOIs
StatePublished - 1 Dec 1999

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