Growth of high indium InGaN films using a combined deposition technique and its application for long wavelength emitter

Kun Ching Shen, Ming Chien Jiang, Tzu Yu Wang, Ray-Hua Horng, Dong Sing Wuu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High indium content InGaN films were grown on sapphire substrate using low temperature pulsed laser deposition (PLD) with nitrogen plasma and a specific target. The controllable target consists of two separate sections: an indium sheet with periodic rectangular-holes and a standard GaN wafer. By changing the rectangular-hole area, a modulated indium vapor was excited by pulsed laser and introduced into the InGaN deposition reaction, contributing the increase in the incorporation of indium into the InGaN film. The structural and optical stability of the 33 and 60% indium InGaN revealed no differences in the line-shape and peak position even after annealing at 800°C for 75 min from x-ray diffraction and luminescence results. Moreover, such high thermal stability of 60% InGaN film was put in metal organic chemical vapor deposition (MOCVD) to regrow GaN layer, the peak position of 860 nm remained unchanged after MOCVD regrowth. The flat and uniform of regrown sample indicates that the PLD method used in this study is indeed promising for the development long wavelength of high indium content InGaN emitters.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XVII
DOIs
StatePublished - 3 Jun 2013
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII - San Francisco, CA, United States
Duration: 4 Feb 20137 Feb 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8641
ISSN (Print)0277-786X

Conference

ConferenceLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII
CountryUnited States
CitySan Francisco, CA
Period4/02/137/02/13

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  • Cite this

    Shen, K. C., Jiang, M. C., Wang, T. Y., Horng, R-H., & Wuu, D. S. (2013). Growth of high indium InGaN films using a combined deposition technique and its application for long wavelength emitter. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVII [864118] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8641). https://doi.org/10.1117/12.2003725