High indium content InGaN films were grown on sapphire substrate using low temperature pulsed laser deposition (PLD) with nitrogen plasma and a specific target. The controllable target consists of two separate sections: an indium sheet with periodic rectangular-holes and a standard GaN wafer. By changing the rectangular-hole area, a modulated indium vapor was excited by pulsed laser and introduced into the InGaN deposition reaction, contributing the increase in the incorporation of indium into the InGaN film. The structural and optical stability of the 33 and 60% indium InGaN revealed no differences in the line-shape and peak position even after annealing at 800°C for 75 min from x-ray diffraction and luminescence results. Moreover, such high thermal stability of 60% InGaN film was put in metal organic chemical vapor deposition (MOCVD) to regrow GaN layer, the peak position of 860 nm remained unchanged after MOCVD regrowth. The flat and uniform of regrown sample indicates that the PLD method used in this study is indeed promising for the development long wavelength of high indium content InGaN emitters.