Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions

Ting Kai Huang, Ying Chieh Chen, Hsin Chun Ko, Hsin Wei Huang, Chia Hsin Wang, Huang Kai Lin, Fu Rong Chen, Ji Jung Kai, Chi Young Lee, Hsin-Tien Chiu*

*Corresponding author for this work

Research output: Contribution to journalArticle

24 Scopus citations

Abstract

A simple galvanic reduction for direct growth of Au nanowires on silicon wafers is developed. The nanowires were prepared by reacting HAuCl 4(aq) with Sn(s) in the presence of CTAC (aq) (cetyltrimethylammonium chloride) and NaNO3(aq), which were important to the product morphology development. The nanowire diameter was 50-100 nm, and the length was more than 20 μm.

Original languageEnglish
Pages (from-to)5647-5649
Number of pages3
JournalLangmuir
Volume24
Issue number11
DOIs
StatePublished - 3 Jun 2008

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    Huang, T. K., Chen, Y. C., Ko, H. C., Huang, H. W., Wang, C. H., Lin, H. K., Chen, F. R., Kai, J. J., Lee, C. Y., & Chiu, H-T. (2008). Growth of high-aspect-ratio gold nanowires on silicon by surfactant-assisted galvanic reductions. Langmuir, 24(11), 5647-5649. https://doi.org/10.1021/la8000575