Growth of GaN on {1235 ¯ }-like facets of patterned sapphire substrate

Pei Yu Wu, Chien Chih Chen, Chia Yen Huang, Hao Chung Kuo, Kun Lin Lin, Yew Chung Sermon Wu

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1 Scopus citations

Abstract

GaN has been grown on wet-etched patterned sapphire substrate (PSS) by metal-organic chemical vapor deposition. It has been found that GaN was initiated not only from bottom c-facet but also from E {1235 ¯ } facets of hexagonal patterns /pyramids. In this study, a vacancy-PSS on c-plane sapphire was used to investigate the growth of GaN on the E-like facets (E1 and E2) of distorted pyramids. The results show that the orientation relationship between E1-GaN and sapphire is (1126) ¯ GaN // (110 ¯ 2) ¯ sapphire and [1121]GaN // [1120] ¯ sapphire. At the same time, that between E2-GaN and sapphire is (011¯4) ¯ GaN // (330 ¯ 6) ¯ sapphire and [0221] ¯ GaN // [1120]¯ sapphire

Original languageEnglish
Pages (from-to)Q68-Q70
JournalECS Journal of Solid State Science and Technology
Volume6
Issue number5
DOIs
StatePublished - 1 Jan 2017

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