Growth of GaN films using trimethylgallium and hydrazine

D. K. Gaskill*, N. Bottka, Ming-Chang Lin

*Corresponding author for this work

Research output: Contribution to journalArticle

70 Scopus citations

Abstract

Hydrazine has been used as a nitrogen source for the organometallic vapor phase deposition of GaN using trimethylgallium and a nitrogen carrier gas in the temperature range 425-960°C. Hydrazine and trimethylgallium form an adduct at room temperature which decomposes over the substrate with an activation energy of 1 eV for temperatures below 650°C. No carbon has been detected by Auger spectroscopy in the films. The electrical properties are dominated by oxygen impurities, probably originating from the hydrazine. Since hydrazine readily decomposes above 400°C, it is a better source of nitrogen for low-temperature depositions than other, more stable nitrogen sources.

Original languageEnglish
Pages (from-to)1449-1451
Number of pages3
JournalApplied Physics Letters
Volume48
Issue number21
DOIs
StatePublished - 1 Dec 1986

Fingerprint Dive into the research topics of 'Growth of GaN films using trimethylgallium and hydrazine'. Together they form a unique fingerprint.

  • Cite this