Growth of epitaxial ZnO thin film on yttria-stabilized zirconia single-crystal substrate

Yen Cheng Chao, Chih Wei Lin, Dong Jie Ke, Yue Han Wu, Hou Guang Chen, Li Chang*, Yen Teng Ho, Mei Hui Liang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


ZnO growth on yttria-stabilized zirconia (YSZ) (1 1 1) single-crystal substrate has been carried out by metalorganic chemical vapor deposition (MOCVD). High-quality epitaxial ZnO has been evidenced by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Cross-sectional TEM from all deposited films reveals that the interface between ZnO and YSZ is atomically flat, and orientation relationship is deduced to be [1 1̄ 0 0]ZnO//[1 1 2̄]YSZ, [2 1̄ 1̄ 0]ZnO//[0 1 1]YSZ and (0 0 0 2)ZnO//(1 1 1)YSZ. It has been found that surface roughness increases with the substrate temperature in the range of 500-700 °C. The growth rate also varies with the temperature.

Original languageEnglish
Pages (from-to)461-463
Number of pages3
JournalJournal of Crystal Growth
Issue numberSPEC. ISS
StatePublished - 1 Jan 2007


  • A1. Interfaces
  • A3. Metalorganic chemical vapor deposition
  • B1. Oxides
  • B2. Semiconducting materials

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