ZnO growth on yttria-stabilized zirconia (YSZ) (1 1 1) single-crystal substrate has been carried out by metalorganic chemical vapor deposition (MOCVD). High-quality epitaxial ZnO has been evidenced by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Cross-sectional TEM from all deposited films reveals that the interface between ZnO and YSZ is atomically flat, and orientation relationship is deduced to be [1 1̄ 0 0]ZnO//[1 1 2̄]YSZ, [2 1̄ 1̄ 0]ZnO//[0 1 1]YSZ and (0 0 0 2)ZnO//(1 1 1)YSZ. It has been found that surface roughness increases with the substrate temperature in the range of 500-700 °C. The growth rate also varies with the temperature.
- A1. Interfaces
- A3. Metalorganic chemical vapor deposition
- B1. Oxides
- B2. Semiconducting materials