Amorphous thin films of chromium‐doped alumina were grown from Al(OiPr)3 (iPr, Isopropyl) and Cr(CO)6 on silicon and quartz substrates by chemical vapour deposition at 673 K. The films were annealed at 1223 and 1473 K to form chromium‐doped γ‐Al2O3 and γ‐Al2O3respectively. The lattice constant a of the γ‐Al2O3thin films enlarged with increasing Cr Concentration. The lattice constant a (=b) of the α‐Al2O3 thin films increased while the lattice constant c decreased with increasing Cr concentration. UV‐visible spectra of the annealed films showed maximum absorptions near 380, 500 and 690 nm.
- Cr‐doped alumina
- Metal‐organic chemical vapour deposition
- Thin film