Growth of chromium‐doped alumina thin films by metal‐organic chemical vapour deposition

Hsin-Tien Chiu*, Been‐Hon ‐H Lin

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Amorphous thin films of chromium‐doped alumina were grown from Al(OiPr)3 (iPr, Isopropyl) and Cr(CO)6 on silicon and quartz substrates by chemical vapour deposition at 673 K. The films were annealed at 1223 and 1473 K to form chromium‐doped γ‐Al2O3 and γ‐Al2O3respectively. The lattice constant a of the γ‐Al2O3thin films enlarged with increasing Cr Concentration. The lattice constant a (=b) of the α‐Al2O3 thin films increased while the lattice constant c decreased with increasing Cr concentration. UV‐visible spectra of the annealed films showed maximum absorptions near 380, 500 and 690 nm.

Original languageEnglish
Pages (from-to)337-341
Number of pages5
JournalAdvanced Materials for Optics and Electronics
Volume4
Issue number5
DOIs
StatePublished - 1 Jan 1994

Keywords

  • Cr‐doped alumina
  • Metal‐organic chemical vapour deposition
  • Thin film

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