Growth of carbon doping Ga0.47in0.53As using CBr4 by gas source molecular beam epitaxy for InP/InGaAs heterojunction bipolar transistor applications

Hao-Chung Kuo*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

In this article, we present the comparison of material quality and device performance of gas-source molecular beam epitaxy (GSMBE)- and metal-organic molecular beam epitaxy (MOMBE)-grown C-doped InGaAs and npn InGaAs/InP heterojunction bipolar transistors (HBTs). The results indicate that the crystal quality of GSMBE-grown samples is comparable to that of MOMBE-grown samples. The GSMBE-grown HBTs show excellent dc and high frequency performance. The dc current gain (β) was 37 at a collector current of 21 mA and the emitter-base and base-collector junction ideality factors were 1.14 and 1.04 indicating good junction properties. For high frequency performance, the fT and fmax are around 108 and 128 GHz for a 4000 Å InGaAs collector with an emitter area of 3×10 μm2. Finally, the thermal stability of C-doped InGaAs and its effects on InP/InGaAs HBT device reliability will be discussed.

Original languageEnglish
Pages (from-to)1185-1189
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume17
Issue number3
DOIs
StatePublished - 1 Dec 1999

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