Growth of atomic-scale aluminum film on GaAs substrate

Ming Cheng Lo, Yen Ting Fan*, Chu Chun Wu, Peng Yu Chen, Sheng-Di Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We present the method for large-area growth of single-crystalline Al films in atomic scale on GaAs substrate by using molecular beam epitaxy. The grown Al film of thickness down to 5 nm exhibits smooth surface morphology, a clear and single X-ray diffraction peak in θ-2θ scan, and nearly transparent optical response. This work open a window for ex-situ studying quantum size effect in metal film.

Original languageEnglish
Title of host publication16th International Conference on Nanotechnology - IEEE NANO 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages868-870
Number of pages3
ISBN (Electronic)9781509039142
DOIs
StatePublished - 21 Nov 2016
Event16th IEEE International Conference on Nanotechnology - IEEE NANO 2016 - Sendai, Japan
Duration: 22 Aug 201625 Aug 2016

Publication series

Name16th International Conference on Nanotechnology - IEEE NANO 2016

Conference

Conference16th IEEE International Conference on Nanotechnology - IEEE NANO 2016
CountryJapan
CitySendai
Period22/08/1625/08/16

Fingerprint Dive into the research topics of 'Growth of atomic-scale aluminum film on GaAs substrate'. Together they form a unique fingerprint.

Cite this