Growth of a-plane ZnO thin films on LaAlO3(1 0 0) substrate by metal-organic chemical vapor deposition

Jr Sheng Tian, Mei Hui Liang, Yen Teng Ho, Yuan An Liu, Li Chang*

*Corresponding author for this work

Research output: Contribution to journalArticle

36 Scopus citations

Abstract

ZnO(1 1 2̄ 0) thin films were successfully grown on LaAlO3 (lanthanum aluminate) (1 0 0) substrate by atmospheric pressure metal-organic chemical vapor deposition. X-ray diffraction, atomic force microscopy, and scanning electron microscopy showed that ZnO films formed at 450 °C were composed of almost all (1 1 2̄ 0) oriented grains while (0 0 0 2) oriented ZnO grains started to appear at temperature above 550 °C. The a-plane ZnO films consisted of two types of domains with their c-axis perpendicular to each other due to LaAlO3(1 0 0) symmetry with low lattice mismatch along 〈1 1 0〉.

Original languageEnglish
Pages (from-to)777-782
Number of pages6
JournalJournal of Crystal Growth
Volume310
Issue number4
DOIs
StatePublished - 15 Feb 2008

Keywords

  • A1. High resolution x-ray diffraction
  • A3. Metalorganic chemical vapor deposition
  • B1. Oxides
  • B2. Semiconducting II-VI materials

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