Growth mechanism of TiO2 nanotube arrays in nanopores of anodic aluminum oxide on Si substrates by atomic layer deposition

Chien Min Liu*, Chih Chen, Hsyi En Cheng

*Corresponding author for this work

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

In this study, we combined atomic layer deposition and anodic aluminum oxide (AAO) on a silicon substrate and developed self-aligned Ti O2 nanotube arrays. We studied the growth mechanism of Ti O2 nanotubes on the inner wall of AAO at 100 and 400°C. We found that at 100°C, Ti O2 grew in a layer-by-layer manner. Therefore, it can be grown into Ti O2 nanotube arrays with very thin walls. However, at 400°C, Ti O2 needs to first form a 2.5-nm amorphous layer, before becoming crystalline Ti O2 via a phase transformation, and growing into crystalline Ti O2 nanotube arrays along the preferred plane {101} by means of a space-limited growth mechanism.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume158
Issue number3
DOIs
StatePublished - 8 Feb 2011

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