Growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered Si (100) substrates

Shiu Jen Liu*, Shyh Feng Chen, Jenh-Yih Juang, Jiunn-Yuan Lin, Kaung-Hsiung Wu, Tseng Ming Uen, Yi Shun Gou

*Corresponding author for this work

Research output: Contribution to journalLetterpeer-review

2 Scopus citations

Abstract

The growth and transport properties of (110)-oriented La2/3Sr1/3MnO3 thin films on TiO2-buffered silicon substrates by pulsed-laser deposition are reported. An insulator-metal transition associated with a ferromagnetic transition was observed at about 360 K. Magnetic measurements showed that in-plane coercive fields are about 60 Oe and 300 Oe at 300 K and 5 K. respectively. A magnetoresistance with a Δρ/ρ(H = 0) ratio of -20% in a magnetic field of 5 T was observed not only near the insulator-metal transition temperature but also below 30 K. Moreover, a T2- to T3-dependence crossover of resistivity was observed around 60 K, indicating that an unconventional one-magnon scattering may have occurred.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume42
Issue number3 B
StatePublished - 15 Mar 2003

Keywords

  • Buffer layer
  • Colossal magnetoresistance
  • Hole-doped manganite
  • Insulator-metal transition
  • One-magnon scattering
  • Pulsed-laser deposition
  • Titanium dioxide
  • Transport properties

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