Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy

W. C. Fan, S. H. Huang, Wu-Ching Chou*, M. H. Tsou, C. S. Yang, C. H. Chia, Nguyen Dang Phu, Luc Huy Hoang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Self-assembled type-II ZnTe quantum dots (QDs) were grown on GaAs (0 0 1) substrates with Zn1-xMgxSe (x=0.24 and 0.52) buffer layers by molecular beam epitaxy. The optical properties of ZnTe QDs were investigated by lowerature photoluminescence (PL) and time-resolved PL. An abrupt variation of the PL peak energy with coverage implies the existence of wetting layer of 3.2 MLs and 4.0 MLs for the Mg concentration x=0.24 and 0.52, respectively. The thickness of wetting layer is larger than that of ZnTe QDs grown on ZnSe buffer layers because the strain between ZnTe and Zn1-xMgxSe is smaller. The non-mono-exponential decay profiles reflect the processes of carrier transfer and recapture. The Kohlrausch's stretching exponential well fits the decay profiles of ZnTe/Zn1-xMgxSe QDs.

Original languageEnglish
Pages (from-to)186-190
Number of pages5
JournalJournal of Crystal Growth
StatePublished - 28 Jul 2015


  • A3. Molecular beam epitaxy
  • B1. Nanomaterials
  • B1. Zinc compounds
  • B2. Semiconducting II-VI materials

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