Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy

W. C. Fan; S. H. Huang; Wu-Ching Chou; M. H. Tsou; C. S. Yang; C. H. Chia; Nguyen Dang Phu; Luc Huy Hoang

doi:10.1016/j.jcrysgro.2015.02.094

Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy

W. C. Fan, S. H. Huang, Wu-Ching Chou^*, M. H. Tsou, C. S. Yang, C. H. Chia, Nguyen Dang Phu, Luc Huy Hoang

^*Corresponding author for this work

Department of Electrophysics

Research output: Contribution to journal › Article

2 Scopus citations

Abstract

Self-assembled type-II ZnTe quantum dots (QDs) were grown on GaAs (0 0 1) substrates with Zn_1-xMg_xSe (x=0.24 and 0.52) buffer layers by molecular beam epitaxy. The optical properties of ZnTe QDs were investigated by lowerature photoluminescence (PL) and time-resolved PL. An abrupt variation of the PL peak energy with coverage implies the existence of wetting layer of 3.2 MLs and 4.0 MLs for the Mg concentration x=0.24 and 0.52, respectively. The thickness of wetting layer is larger than that of ZnTe QDs grown on ZnSe buffer layers because the strain between ZnTe and Zn_1-xMg_xSe is smaller. The non-mono-exponential decay profiles reflect the processes of carrier transfer and recapture. The Kohlrausch's stretching exponential well fits the decay profiles of ZnTe/Zn_1-xMg_xSe QDs.

Original language	English
Pages (from-to)	186-190
Number of pages	5
Journal	Journal of Crystal Growth
Volume	425
DOIs	https://doi.org/10.1016/j.jcrysgro.2015.02.094
State	Published - 28 Jul 2015

Keywords

A3. Molecular beam epitaxy
B1. Nanomaterials
B1. Zinc compounds
B2. Semiconducting II-VI materials

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10.1016/j.jcrysgro.2015.02.094

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Fan, W. C., Huang, S. H., Chou, W-C., Tsou, M. H., Yang, C. S., Chia, C. H., Phu, N. D., & Hoang, L. H. (2015). Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy. Journal of Crystal Growth, 425, 186-190. https://doi.org/10.1016/j.jcrysgro.2015.02.094

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title = "Growth and optical properties of ZnTe quantum dots on ZnMgSe by molecular beam epitaxy",

abstract = "Self-assembled type-II ZnTe quantum dots (QDs) were grown on GaAs (0 0 1) substrates with Zn1-xMgxSe (x=0.24 and 0.52) buffer layers by molecular beam epitaxy. The optical properties of ZnTe QDs were investigated by lowerature photoluminescence (PL) and time-resolved PL. An abrupt variation of the PL peak energy with coverage implies the existence of wetting layer of 3.2 MLs and 4.0 MLs for the Mg concentration x=0.24 and 0.52, respectively. The thickness of wetting layer is larger than that of ZnTe QDs grown on ZnSe buffer layers because the strain between ZnTe and Zn1-xMgxSe is smaller. The non-mono-exponential decay profiles reflect the processes of carrier transfer and recapture. The Kohlrausch's stretching exponential well fits the decay profiles of ZnTe/Zn1-xMgxSe QDs.",

keywords = "A3. Molecular beam epitaxy, B1. Nanomaterials, B1. Zinc compounds, B2. Semiconducting II-VI materials",

author = "Fan, {W. C.} and Huang, {S. H.} and Wu-Ching Chou and Tsou, {M. H.} and Yang, {C. S.} and Chia, {C. H.} and Phu, {Nguyen Dang} and Hoang, {Luc Huy}",

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AU - Fan, W. C.

AU - Huang, S. H.

AU - Chou, Wu-Ching

AU - Tsou, M. H.

AU - Yang, C. S.

AU - Chia, C. H.

AU - Phu, Nguyen Dang

AU - Hoang, Luc Huy

PY - 2015/7/28

Y1 - 2015/7/28

N2 - Self-assembled type-II ZnTe quantum dots (QDs) were grown on GaAs (0 0 1) substrates with Zn1-xMgxSe (x=0.24 and 0.52) buffer layers by molecular beam epitaxy. The optical properties of ZnTe QDs were investigated by lowerature photoluminescence (PL) and time-resolved PL. An abrupt variation of the PL peak energy with coverage implies the existence of wetting layer of 3.2 MLs and 4.0 MLs for the Mg concentration x=0.24 and 0.52, respectively. The thickness of wetting layer is larger than that of ZnTe QDs grown on ZnSe buffer layers because the strain between ZnTe and Zn1-xMgxSe is smaller. The non-mono-exponential decay profiles reflect the processes of carrier transfer and recapture. The Kohlrausch's stretching exponential well fits the decay profiles of ZnTe/Zn1-xMgxSe QDs.

AB - Self-assembled type-II ZnTe quantum dots (QDs) were grown on GaAs (0 0 1) substrates with Zn1-xMgxSe (x=0.24 and 0.52) buffer layers by molecular beam epitaxy. The optical properties of ZnTe QDs were investigated by lowerature photoluminescence (PL) and time-resolved PL. An abrupt variation of the PL peak energy with coverage implies the existence of wetting layer of 3.2 MLs and 4.0 MLs for the Mg concentration x=0.24 and 0.52, respectively. The thickness of wetting layer is larger than that of ZnTe QDs grown on ZnSe buffer layers because the strain between ZnTe and Zn1-xMgxSe is smaller. The non-mono-exponential decay profiles reflect the processes of carrier transfer and recapture. The Kohlrausch's stretching exponential well fits the decay profiles of ZnTe/Zn1-xMgxSe QDs.

KW - A3. Molecular beam epitaxy

KW - B1. Nanomaterials

KW - B1. Zinc compounds

KW - B2. Semiconducting II-VI materials

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