Abstract
Self-assembled type-II ZnTe quantum dots (QDs) were grown on GaAs (0 0 1) substrates with Zn1-xMgxSe (x=0.24 and 0.52) buffer layers by molecular beam epitaxy. The optical properties of ZnTe QDs were investigated by lowerature photoluminescence (PL) and time-resolved PL. An abrupt variation of the PL peak energy with coverage implies the existence of wetting layer of 3.2 MLs and 4.0 MLs for the Mg concentration x=0.24 and 0.52, respectively. The thickness of wetting layer is larger than that of ZnTe QDs grown on ZnSe buffer layers because the strain between ZnTe and Zn1-xMgxSe is smaller. The non-mono-exponential decay profiles reflect the processes of carrier transfer and recapture. The Kohlrausch's stretching exponential well fits the decay profiles of ZnTe/Zn1-xMgxSe QDs.
Original language | English |
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Pages (from-to) | 186-190 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 425 |
DOIs | |
State | Published - 28 Jul 2015 |
Keywords
- A3. Molecular beam epitaxy
- B1. Nanomaterials
- B1. Zinc compounds
- B2. Semiconducting II-VI materials