High density InN/GaN nanodots were grown by pulsed mode (PM) metalorganic chemical vapor deposition (MOCVD). InN nanodots density of up to ∼5×1010 cm-2 at a growth temperature of 550 °C was achieved. The high diffusion activation energy of 2.65 eV due to high NH3 flow rate generated more reactive nitrogen adatoms on the growth surface, and is believed to be the main reason for the growth of high density InN nanodots. In addition, an anomalous temperature dependence of the PL peak energy was observed for high density InN nanodots. The high carrier concentration, due to high In vacancy (VIn) in the InN nanodots, thermally agitated to the conduction band. As the measurement temperature increased, the increase of Fermi energy resulted in blue-shifted PL peak energy. From the Arrhenius plot of integrated PL intensity, the thermal activation energy for the PM grown InN nanodots was estimated to be Ea∼51 meV, indicating strong localization of carriers in the high density InN nanodots.
- A1. Nanostructures
- A3. Metalorganic chemical vapor deposition
- B1. InN
- B2. Semiconducting indium compounds