Bi3.25La0.75Ti3O12 (BLT) thin films were grown on Pt/Ti/SiO2/Si and LNO/Pt/Ti/SiO2/Si substrates using sol-gel processing. Scanning electron micrographs and X-ray diffraction showed uniform surfaces composed of rod-like grains deposited on the Pt/Ti/SiO2/Si substrates and large planar grain with plate-like structure and having the c-axis preferred orientation deposited on the LNO/Pt/Ti/SiO2/Si substrates. The BLT thin films deposition on LNO/Pt/Ti/SiO2/Si substrates show good polarization-voltage (P-E), capacitance-voltage (C-V). More importantly, the BLT thin films derived on LNO/Pt/Ti/SiO2/Si show little change at various cycling fields and cycling frequencies both in the switching polarization (Psw) and in the non-switching polarization (Pns) up to 2×1010 switching cycles.
- A1. Characterization
- A3. Polycrystalline deposition
- B1. Inorganic compounds
- B2. Ferroelectric materials