Growth and ferroelectric study of Bi3.25La0.75Ti 3O12 thin films on different substrates

Jiwei Zhai*, Bo Shen, Xi Yao, Haydn Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


Bi3.25La0.75Ti3O12 (BLT) thin films were grown on Pt/Ti/SiO2/Si and LNO/Pt/Ti/SiO2/Si substrates using sol-gel processing. Scanning electron micrographs and X-ray diffraction showed uniform surfaces composed of rod-like grains deposited on the Pt/Ti/SiO2/Si substrates and large planar grain with plate-like structure and having the c-axis preferred orientation deposited on the LNO/Pt/Ti/SiO2/Si substrates. The BLT thin films deposition on LNO/Pt/Ti/SiO2/Si substrates show good polarization-voltage (P-E), capacitance-voltage (C-V). More importantly, the BLT thin films derived on LNO/Pt/Ti/SiO2/Si show little change at various cycling fields and cycling frequencies both in the switching polarization (Psw) and in the non-switching polarization (Pns) up to 2×1010 switching cycles.

Original languageEnglish
Pages (from-to)110-116
Number of pages7
JournalJournal of Crystal Growth
Issue number1-2
StatePublished - 15 Jun 2004


  • A1. Characterization
  • A3. Polycrystalline deposition
  • B1. Inorganic compounds
  • B2. Ferroelectric materials

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