Growth and fabrication of GaN light emitting diode on patterned-sapphire substrate

Binh Tinh Tran, Chen Hauw Ming, Kung Liang Lin, Hao Ming Chen, Ching Chian Wang, Chien Chih Chen, Chih Yung Huang, Chen Chen Chung, Edward Yi Chang

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

In this study, the growth of GaN-films-based light emitting diodes (LEDs), have been clearly demonstrated on wet-etching patterned sapphire substrate (PSS) and conventional LEDs. The wet-etching PSS LED device showed a significantly higher performance than the conventional LED device. The wet-etching PSS LED device exhibited a leakage current of 9 mA under a bias of 8 V, an external quantum efficiency and output powers of 35.09 % and 19.23 mW under 20 mA injection current as compared to 12 mA, 27.23%, and 15.02 mW of the conventional LED device.

Original languageEnglish
Pages (from-to)1-4
Number of pages4
JournalECS Transactions
Volume50
Issue number48
DOIs
StatePublished - 1 Dec 2012

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