Growth and fabrication of AlGaN/GaN HEMT on SiC substrate

Yuen Yee Wong*, Yu Sheng Chiu, Tien Tung Luong, Tai Ming Lin, Yen Teng Ho, Yue Chin Lin, Edward Yi Chang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

6 Scopus citations

Abstract

AlGaN/GaN high electron mobility transistor (HEMT) was grown on silicon carbide substrate by metalorganic chemical vapor deposition technique. The AlGaN/GaN structure was optimized by tuning the growth conditions such as AlN buffer thickness, and the Al composition and thickness of AlGaN barrier layer. As a result, the X-ray rocking curve widths were 277 arcsec and 324 arcsec for the GaN (002) and (102) planes, respectively, indicating a high crystalline quality. Hall measurement showed that the AlGaN/GaN structure has a high electron mobility of 1840 (cm2/V-s) and a sheet electron concentration of 9.85 ×1012 cm-2. Besides, HEMT device with sub-micron gate-length (0.7 μm) was also successfully fabricated. DC measurement showed that the HEMT device has a saturated current of 800 mA/mm, a transconductance of 257 mS/mm and an off-state breakdown voltage larger than 100 V. For RF performance, the device has achieved an output power density (Pout), gain, and power added efficiency (PAE) of 7 W/mm, 23.5 dB and 61.7%, respectively, measured at 2 GHz frequency. On the other hand, the RF performance measured at 8 GHz showed that the device could achieve P out, gain and PAE of 5.01 W/mm, 14.9 dB and 26.23% respectively.

Original languageEnglish
Title of host publication2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings
Pages729-732
Number of pages4
DOIs
StatePublished - 1 Dec 2012
Event2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Kuala Lumpur, Malaysia
Duration: 19 Sep 201221 Sep 2012

Publication series

Name2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings

Conference

Conference2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012
CountryMalaysia
CityKuala Lumpur
Period19/09/1221/09/12

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    Wong, Y. Y., Chiu, Y. S., Luong, T. T., Lin, T. M., Ho, Y. T., Lin, Y. C., & Chang, E. Y. (2012). Growth and fabrication of AlGaN/GaN HEMT on SiC substrate. In 2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings (pp. 729-732). [6417246] (2012 10th IEEE International Conference on Semiconductor Electronics, ICSE 2012 - Proceedings). https://doi.org/10.1109/SMElec.2012.6417246