Growth and electroluminescent property of multi-facet InGaN/GaN multiple quantum well light emitting device

Yun Jing Li, Shih Pang Chang, Yuh Jen Cheng, Hao-Chung Kuo, Chun Yen Chang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

We report the study of InGaN/GaN multiple quantum wells (MQWs) grown on multi-facet microrods. The multi-facet MQWs have broad emission spectrum. Electrical injection was demonstrated with emission color ranged from red to blue.

Original languageEnglish
Title of host publication2015 Conference on Lasers and Electro-Optics, CLEO 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781557529688
DOIs
StatePublished - 10 Aug 2015
EventConference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States
Duration: 10 May 201515 May 2015

Publication series

NameConference on Lasers and Electro-Optics Europe - Technical Digest
Volume2015-August

Conference

ConferenceConference on Lasers and Electro-Optics, CLEO 2015
CountryUnited States
CitySan Jose
Period10/05/1515/05/15

Keywords

  • Fabrication
  • Gallium nitride
  • Light emitting diodes
  • Lighting
  • Quantum well devices
  • Substrates
  • Three-dimensional displays

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