Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors

B. T. McDermott*, E. R. Gertner, S. Pittman, C. W. Seabury, Mau-Chung Chang

*Corresponding author for this work

Research output: Contribution to journalArticle

55 Scopus citations

Abstract

GaAsSb is a low band gap, lattice matched to InP, alternative to GaInAs. Growth and doping using diethyltellurium and carbon tetrachloride were investigated. Hole concentrations up to 1.3×1020 cm -3 have been achieved in as-grown carbon-doped GaAsSb [i.e., no postgrowth annealing was necessary for dopant activation, a key requirement for n-p-n heterojunction bipolar transistor (HBT) structures]. This is a sevenfold improvement over the best carbon-doped InGaAs reported by metalorganic chemical vapor deposition. Hall measurements indicate that GaAsSb's hole mobility is 55%-60% of GaInAs's, for a given carrier concentration. InP HBTs with carbon-doped GaAsSb base are demonstrated.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
DOIs
StatePublished - 1 Dec 1995

Fingerprint Dive into the research topics of 'Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors'. Together they form a unique fingerprint.

  • Cite this