Growth and crystal structure investigation of self-catalyst InAs/GaSb heterostructure nanowires on Si substrate

Ramesh Kumar Kakkerla, Chih Jen Hsiao, Deepak Anandan, Sankalp Kumar Singh, Edward Yi Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We demonstrate the self-catalyst (SC) growth of vertically aligned InAs and InAs/GaSb heterostructure nanowires on Si(111) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on morphology and growth rate for SC InAs and InAs/GaSb heterostructure nanowires (NWs) were investigated. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the SC InAs NW core at certain growth temperatures. Crystal structure of InAs/GaSb heterostructure nanowires was also discussed. These results show that the control over SC InAs NWs growth, the GaSb shell thickness and it's crystal quality was achieved which is essential for future nano electronic devices such as TFET.

Original languageEnglish
Title of host publication2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages133-134
Number of pages2
ISBN (Electronic)9781538627723
DOIs
StatePublished - 26 Apr 2018
Event12th IEEE Nanotechnology Materials and Devices Conference, NMDC 2017 - Singapore, Singapore
Duration: 2 Oct 20174 Oct 2017

Publication series

Name2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017
Volume2018-January

Conference

Conference12th IEEE Nanotechnology Materials and Devices Conference, NMDC 2017
CountrySingapore
CitySingapore
Period2/10/174/10/17

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  • Cite this

    Kakkerla, R. K., Hsiao, C. J., Anandan, D., Singh, S. K., & Chang, E. Y. (2018). Growth and crystal structure investigation of self-catalyst InAs/GaSb heterostructure nanowires on Si substrate. In 2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017 (pp. 133-134). (2017 IEEE 12th Nanotechnology Materials and Devices Conference, NMDC 2017; Vol. 2018-January). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NMDC.2017.8350531