Growth and characterizations of GaN on SiC substrates with buffer layers

C. F. Lin*, Huang-Chung Cheng, G. C. Chi, M. S. Feng, J. D. Guo, J. Minghuang Hong, C. Y. Chen

*Corresponding author for this work

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Abstract

High quality GaN epitaxial layers were grown on 6H-SiC substrates by using low-pressure metalorganic chemical vapor deposition method. Samples employing a three-period GaN/Al0.08Ga0.92N (100 Å/100 Å) as a buffer layer produce a good quality GaN epitaxial layer, with mobility and carrier concentration of 612 cm2/V·s and 1.3×1017 cm-3 (at 300 K), respectively. The enhanced electron mobility in the Al0.08Ga0.92N/GaN heterostructures is also observed. By using the van der Pauw method of Hall measurement, the sheet carrier density and mobility at 4.2 K for the Al0.08Ga0.92N/GaN heterostructure are 5.8×1012 cm-2 and 5300 cm2/V·s, respectively. Strong SdH (Shubnikov-de Haas) oscillations were observed to confirm the two-dimensional electron gas (2DEG) phenomenon at the AlGaN/GaN top heterointerface. In addition, an extra SdH oscillation also resulted from the high-quality 2DEG channel of the GaN/AlGaN bottom heterointerface.

Original languageEnglish
Pages (from-to)2378-2382
Number of pages5
JournalJournal of Applied Physics
Volume82
Issue number5
DOIs
StatePublished - 1 Sep 1997

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    Lin, C. F., Cheng, H-C., Chi, G. C., Feng, M. S., Guo, J. D., Hong, J. M., & Chen, C. Y. (1997). Growth and characterizations of GaN on SiC substrates with buffer layers. Journal of Applied Physics, 82(5), 2378-2382. https://doi.org/10.1063/1.366048