Growth and characterization of topological insulator Bi2Se 3 thin films on SrTiO3 using pulsed laser deposition

Phuoc Huu Le; Kaung-Hsiung Wu; Chih-Wei Luo; Leu-Jih Perng

doi:10.1016/j.tsf.2013.01.104

Growth and characterization of topological insulator Bi₂Se ₃ thin films on SrTiO₃ using pulsed laser deposition

Phuoc Huu Le, Kaung-Hsiung Wu, Chih-Wei Luo, Leu-Jih Perng^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

Bismuth selenide (Bi₂Se₃) thin films were grown on SrTiO₃(111) (STO) substrates using pulsed laser deposition (PLD). The structural, morphological, electrical, and transport properties were studied at various substrate temperatures (T_S) from 120 to 350 C. Amorphous films grown at T_S < 180 C exhibited semiconducting behavior, and highly c-axis-oriented textured films deposited at T_S ≥ 180 C exhibited metallic behavior. Bi₂Se₃ thin-films were epitaxially grown on STO substrates at 300 and 350 C. Thickness-dependent characteristics were also investigated for optimized Bi₂Se ₃ films deposited at T_S = 230 C. The semiconducting or metallic characteristics of Bi₂Se₃ films prepared using PLD were observed through electrical and transport results.

Original language	English
Pages (from-to)	659-665
Number of pages	7
Journal	Thin Solid Films
Volume	534
DOIs	https://doi.org/10.1016/j.tsf.2013.01.104
State	Published - 1 May 2013

Keywords

BiSe
Pulsed laser deposition
SrTiO substrate
Thin film
Topological insulator

Access to Document

10.1016/j.tsf.2013.01.104

Fingerprint Dive into the research topics of 'Growth and characterization of topological insulator Bi2Se 3 thin films on SrTiO3 using pulsed laser deposition'. Together they form a unique fingerprint.

Cite this

@article{ef92fdac9301431198a1889800326842,

title = "Growth and characterization of topological insulator Bi2Se 3 thin films on SrTiO3 using pulsed laser deposition",

abstract = "Bismuth selenide (Bi2Se3) thin films were grown on SrTiO3(111) (STO) substrates using pulsed laser deposition (PLD). The structural, morphological, electrical, and transport properties were studied at various substrate temperatures (TS) from 120 to 350 C. Amorphous films grown at TS < 180 C exhibited semiconducting behavior, and highly c-axis-oriented textured films deposited at TS ≥ 180 C exhibited metallic behavior. Bi2Se3 thin-films were epitaxially grown on STO substrates at 300 and 350 C. Thickness-dependent characteristics were also investigated for optimized Bi2Se 3 films deposited at TS = 230 C. The semiconducting or metallic characteristics of Bi2Se3 films prepared using PLD were observed through electrical and transport results.",

keywords = "BiSe, Pulsed laser deposition, SrTiO substrate, Thin film, Topological insulator",

author = "Le, {Phuoc Huu} and Kaung-Hsiung Wu and Chih-Wei Luo and Leu-Jih Perng",

year = "2013",

month = may,

day = "1",

doi = "10.1016/j.tsf.2013.01.104",

language = "English",

volume = "534",

pages = "659--665",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Growth and characterization of topological insulator Bi2Se 3 thin films on SrTiO3 using pulsed laser deposition

AU - Le, Phuoc Huu

AU - Wu, Kaung-Hsiung

AU - Luo, Chih-Wei

AU - Perng, Leu-Jih

PY - 2013/5/1

Y1 - 2013/5/1

N2 - Bismuth selenide (Bi2Se3) thin films were grown on SrTiO3(111) (STO) substrates using pulsed laser deposition (PLD). The structural, morphological, electrical, and transport properties were studied at various substrate temperatures (TS) from 120 to 350 C. Amorphous films grown at TS < 180 C exhibited semiconducting behavior, and highly c-axis-oriented textured films deposited at TS ≥ 180 C exhibited metallic behavior. Bi2Se3 thin-films were epitaxially grown on STO substrates at 300 and 350 C. Thickness-dependent characteristics were also investigated for optimized Bi2Se 3 films deposited at TS = 230 C. The semiconducting or metallic characteristics of Bi2Se3 films prepared using PLD were observed through electrical and transport results.

AB - Bismuth selenide (Bi2Se3) thin films were grown on SrTiO3(111) (STO) substrates using pulsed laser deposition (PLD). The structural, morphological, electrical, and transport properties were studied at various substrate temperatures (TS) from 120 to 350 C. Amorphous films grown at TS < 180 C exhibited semiconducting behavior, and highly c-axis-oriented textured films deposited at TS ≥ 180 C exhibited metallic behavior. Bi2Se3 thin-films were epitaxially grown on STO substrates at 300 and 350 C. Thickness-dependent characteristics were also investigated for optimized Bi2Se 3 films deposited at TS = 230 C. The semiconducting or metallic characteristics of Bi2Se3 films prepared using PLD were observed through electrical and transport results.

KW - BiSe

KW - Pulsed laser deposition

KW - SrTiO substrate

KW - Thin film

KW - Topological insulator

UR - http://www.scopus.com/inward/record.url?scp=84876677696&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2013.01.104

DO - 10.1016/j.tsf.2013.01.104

M3 - Article

AN - SCOPUS:84876677696

VL - 534

SP - 659

EP - 665

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

Growth and characterization of topological insulator Bi₂Se ₃ thin films on SrTiO₃ using pulsed laser deposition

Abstract

Keywords

Access to Document

Other files and links

Fingerprint Dive into the research topics of 'Growth and characterization of topological insulator Bi<sub>2</sub>Se <sub>3</sub> thin films on SrTiO<sub>3</sub> using pulsed laser deposition'. Together they form a unique fingerprint.

Cite this