Growth and characterization of topological insulator Bi2Se 3 thin films on SrTiO3 using pulsed laser deposition

Phuoc Huu Le, Kaung-Hsiung Wu, Chih-Wei Luo, Leu-Jih Perng*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

48 Scopus citations


Bismuth selenide (Bi2Se3) thin films were grown on SrTiO3(111) (STO) substrates using pulsed laser deposition (PLD). The structural, morphological, electrical, and transport properties were studied at various substrate temperatures (TS) from 120 to 350 C. Amorphous films grown at TS < 180 C exhibited semiconducting behavior, and highly c-axis-oriented textured films deposited at TS ≥ 180 C exhibited metallic behavior. Bi2Se3 thin-films were epitaxially grown on STO substrates at 300 and 350 C. Thickness-dependent characteristics were also investigated for optimized Bi2Se 3 films deposited at TS = 230 C. The semiconducting or metallic characteristics of Bi2Se3 films prepared using PLD were observed through electrical and transport results.

Original languageEnglish
Pages (from-to)659-665
Number of pages7
JournalThin Solid Films
StatePublished - 1 May 2013


  • BiSe
  • Pulsed laser deposition
  • SrTiO substrate
  • Thin film
  • Topological insulator

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