Growth and characterization of single crystalline Ga-doped ZnO thin films using metal-organic chemical vapor deposition

Ray-Hua Horng, Chiung Yi Huang, Chen Yang Yin, Parvaneh Ravadgar, Dong Sing Wuu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Ga-doped ZnO (GZO) thin films with high thermal stability and high carrier mobility are essential to develop transparent conductive electrodes (TCEs). In this study, the carrier concentration and the electrical resistivity of GZO thin films are related to the Ga flow rates. GZO thin films have been grown on c-plane sapphire substrates with Ga doping concentration of 1020 cm-3 using metal-organic chemical vapor deposition technique. Crystalline structures of as-grown and post-annealed samples are studied by x-ray diffraction technique. Their transparency is also tracked by n & k analyzer. Under optimized growth parameters, the lowest resistivity of GZO is 5.5 × 10-4 ohm-cm.

Original languageEnglish
Title of host publicationWide-Bandgap Semiconductor Materials and Devices 14
Pages3-9
Number of pages7
Edition2
DOIs
StatePublished - 21 Oct 2013
EventWide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting - Toronto, ON, Canada
Duration: 12 May 201316 May 2013

Publication series

NameECS Transactions
Number2
Volume53
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceWide-Bandgap Semiconductor Materials and Devices 14 - 223rd ECS Meeting
CountryCanada
CityToronto, ON
Period12/05/1316/05/13

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    Horng, R-H., Huang, C. Y., Yin, C. Y., Ravadgar, P., & Wuu, D. S. (2013). Growth and characterization of single crystalline Ga-doped ZnO thin films using metal-organic chemical vapor deposition. In Wide-Bandgap Semiconductor Materials and Devices 14 (2 ed., pp. 3-9). (ECS Transactions; Vol. 53, No. 2). https://doi.org/10.1149/05302.0003ecst